| ID | 原文 | 译文 |
| 44186 | 室温下薄膜饱和极化强度约为 35. 37 μC /cm2，随着温度的升高，饱和极化强度降低， | The saturated polarization is about 35.37 μC/cm2 at room temperature and then reduces with the increase of the temperature. |
| 44187 | 同时薄膜从反铁电相依次相变为铁电相、顺电相; | Continuous phase transition of the thin films occurres from antiferroelectric to ferroelectric to paraelectric state. |
| 44188 | 研究了反铁电薄膜有效储能密度及能量转换效率， | The efficient stored energy density and energy conversion efficiency of the antiferroelectric thinfilms were studied. |
| 44189 | 室温下反铁电薄膜的有效储能密度约为 7. 73 J/cm3，能量转换效率约为 49%， | At room temperature, the efficient stored energy density is about 7.73 J/cm3 and theenergy conversion efficiency is about 49% in film capacitors. |
| 44190 | 随温度升高，有效储能密度降低而能量转换效率保持不变。 | With the temperature rising, the efficientstored energy density decreases but the energy conversion efficiency remains stable. |
| 44191 | 对一种集成稳压器的失效问题进行了研究并分析了失效机理。 | Failure problems of an integrated voltage regulator were researched and the failuremechanism were analyzed. |
| 44192 | 通过内部目检、微光分析、扫描电镜及能谱分析，定位了集成稳压器的失效点。 | The failure point of the integrated voltage regulator was identified by optical inspection, emission microscope, scanning electron microscopy and energy dispersive spectromete. |
| 44193 | 采用仿真和实验分别对稳压器的失效原因进行了分析和验证， | Anfailure reason of the regulator was analyzed and verified with simulation and experiment. |
| 44194 | 搭建了输出端到公共端存在电流通路的等效电路，计算并仿真了等效电路的 I-V 模型， | The equivalentcircuit between the output port and the common port was build, and the I-V model of the circuit was calculated and simulated. |
| 44195 | 测试结果表明，仿真 I-V 特性曲线与实际 I-V 特性曲线高度一致。 | Test results indicate that the simulated I-V characteristic curve and the real I-V characteristic curve are highly consistent. |