ID | 原文 | 译文 |
42816 | Al2O3 薄膜的表面均匀、连续,生长 2 h 后膜厚度约为 20 ~ 30 nm。 | The surface of the Al2O3 thin film is uniform and continuous, and the thin film thickness is 20~30 nm after growing for 2h. |
42817 | 薄膜的电绝缘性能良好,平均击穿场强达到 1. 74 MV/cm,可以用作半导体器件的绝缘层。 | The electrical insulation properties of the thinfilm are good, and the average breakdown field strength reached is about 1.74 MV/cm, which be used asan insulation layer in semiconductor devices. |
42818 | 进一步将 CLD 法制备的 Al2O3薄膜用作摩擦电纳米发电机 ( TENG) 中的电子阻挡层, | It was further proposed to use the Al2O3 thin film preparedwith the CLD method as an electron blocking layer in a triboelectric nanogenerator (TENG) . |
42819 | 其开路电压和短路电流约为 120 V 和5 μA,分别是不含 Al2O3 TENG 的 1. 6 倍和 2 倍。 | Its open circuit voltage and short circuit current are about 120 V and 5 μA, respectively, which are 1.6 times and 2 times higher than those of the TENG without an Al2O3 layer. |
42820 | 该薄膜不受摩擦层磨损的影响,可以有效地改善 TENG 性能。 | This Al2O3 thin film was not affected bythe wear of the friction layer and effectively improve the performance of the TENG. |
42821 | 结果表明,CLD 法可作为一种在室温下、低成本、无毒且简便的新方法,用于半导体器件中绝缘或钝化薄膜的制备。 | The results indicate that the CLD method can serve as a low cost, nontoxic and facile new technique at room temperature forthe preparation of insulation or passivation thin films in semiconductor devices. |
42822 | 设计了一款低相位噪声的锁相环 ( PLL) , | A phase-locked loop (PLL) with low phase noise was designed. |
42823 | 该 PLL 主要由可编程分频器、鉴相器和锁定指示电路等组成, | The PLL was mainly composed of the programmable frequency divider, phase detector and lock detect circuits. |
42824 | 通过外接参考时钟、有源环路滤波器和压控振荡器 ( VCO) 构成完整的 PLL 频率源。 | A complete PLL frequency source was composed of the external reference clock, active loop filter and voltage-controlled oscillator (VCO) . |
42825 | 研究了 PLL 频率源中各个噪声源及其传递函数, | The noise sources and their transfer function in the PLL frequency source were studied. |