| ID | 原文 | 译文 |
| 42356 | 随着芯片功率密度的增大，对多芯片组件 ( MCM) 可靠性设计提出了更高的要求， | With the increase of the chip power density, higher requirements are put forward for thereliability design of the multi-chip module (MCM) . |
| 42357 | 热阻是 MCM 可靠性设计的重要参数之一，影响着芯片的结温和运行条件。 | The thermal resistance is one of the important parameters of the reliability design of the MCM, which affects the junction temperature and operationcondition of the chip. |
| 42358 | 以 MCM 发光二极管( LED) 为例，对热阻拓扑网络模型和热阻矩阵模型的芯片结温进行了理论分析， | Taking the MCM-LED for example, the chip junction temperature of the thermal resistance topological network model and the thermal resistance matrix model were theoretically analyzed. |
| 42359 | 研究了在不同芯片功耗、基板导热系数和芯片间距下两种模型与 ANSYS 仿真结果的误差， | The errors of the above two models and ANSYS simulation results were analyzed under different chippower consumptions, thermal conductivities of substrate and chip distances. |
| 42360 | 并分析了热阻拓扑网络模型误差大的原因。 | The reasons for the largeerror of the thermal resistance topological network model were analyzed. |
| 42361 | 根据芯片热耦合效应和扩散热阻原理，提出了一种耦合扩散热阻的拓扑网络模型，并得出该新型热阻拓扑网络模型的结温表达式与热阻矩阵模型一致， | A topological network model ofthe coupling thermal spreading resistance was proposed based on the thermal coupling effect and thermalspreading resistance, which had the same theoretical expression of the junction temperature as the thermalresistance matrix model. |
| 42362 | 推导出耦合扩散热阻即为芯片与基板热流区域之间的热阻，揭示了二维 MCM 的热耦合规律，为二维 MCM 的可靠性设计提供了理论依据。 | It is deduced that the thermal resistance between the chip and the heat flow region of the substrate is the coupling thermal spreading resistance, and the thermal coupling rules of 2DMCM is revealed, which provides theoretical support for the reliability design of 2D MCM. |
| 42363 | 分析了晶圆双面电镀金工艺过程中影响镀层厚度均匀性的因素， | The factors affecting the uniformity of coating thickness of wafer during the double-sidedgold electroplating process were analyzed. |
| 42364 | 通过单因素对比实验，研究阴极触点数量、电场屏蔽板开孔尺寸、旋转桨与晶圆间距和旋转桨转速等因素对镀金层厚度均匀性的影响及其影响机理。 | The single factor comparative experiments were carried out tostudy the factors affecting the coating uniformity, including the number of cathode contacts, the dimension of the hole in the electric field baffle, the distance between rotating paddle and wafer, and therotating speed of rotating paddle.The influence mechanisms of the parameters were also analyzed. |
| 42365 | 当阴极触点数量为 12 个，电场屏蔽板开孔尺寸为 60 mm，旋转桨与晶圆的间距为 3 mm，旋转桨转速 为 180 r/min 时，可 得 到 最 优 的 4 英 寸 ( 1 英 寸 =2. 54 mm) 晶圆双面电镀金厚度均匀性。 | When the cathode contacts are 12, the dimension of the hole in the electric field baffle is 60 mm, the distancebetween rotating paddle and wafer is 3 mm, and the rotating speed of rotating paddle is 180 r/min, theoptimum uniformity of the double-sided coating thickness of the 4-inch (1 inch = 2.54 cm) wafer is obtained. |