| ID | 原文 | 译文 |
| 42206 | 有利于提高塑封微摄像头器件在湿热环境中的可靠性。 | It is beneficial to improve the reliability of the plastic encapsulated micro-cameradevice in hygrothermal environments. |
| 42207 | 基于 0. 15 μm GaN HEMT 工艺，设计并实现了一款超宽带毫米波 GaN 低噪声放大器( LNA) 微波单片集成电路 ( MMIC) 。 | Based on 0.15 μm GaN HEMT process, a millimeter-wave ultra-broadband GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) was designed and fabricated. |
| 42208 | 该放大器采用 4 级级联结构，其输入和输出端均采用 5 阶匹配网络，提高了放大器的匹配带宽; | Afour-stage cascade structure was adopted in the amplifier, in which a fifth-order matching network wasused at input and output ports to expand the matching bandwith. |
| 42209 | 由微带线、短截线和电容组成的无电阻输入匹配网络减小了输入热噪声，优化了电路的噪声系数; | The input thermal noise was reduced andthe noise figure of the circuit was optimized by the non-resistance input matching network, which wascomposed of the microstrip-line, stub-line and capacitor. |
| 42210 | 在级间匹配网络中引入电阻元件，通过降低 Q 值扩展电路工作带宽。 | Some resistance elements were introduced intointer-stage matching networks to lower the Q value and thus to widen the operating bandwidth of the circuit. |
| 42211 | 采用 SiC 衬底 0. 15 μm AlGaN/GaN HEMT 工艺进行流片，在片测试结果表明，在频率 14～34 GHz时，该 LNA 的增益为 ( 18±1) dB、噪声系数小于 4. 5 dB，在频率为 39 GHz时1 dB压缩点输出功率为 19 dBm，最大输入承受功率为 30 dBm，相对工作带宽大于 100%。 | The LNA was fabricated by using 0.15 μm AlGaN/GaN HEMT technology on SiC subsrtate.The onwafer test results of the LNA show that in the frequency range of 14－34 GHz, the gain is (18±1) dB, the noise figure is less than 4.5 dB, the output power at the 1 dB compression point is 19 dBm at39 GHz, the maximum allowable input power is 30 dBm, and the relative operating bandwidth is greaterthan 100%. |
| 42212 | 研制的 MMIC LNA 面积为 1. 71 mm2，功耗为 1. 05 W。 | The area of the MMIC LNA is 1.71 mm2 and the power consumption is 1.05 W. |
| 42213 | 提出了一种新型超级结 MOSFET 结构，通过优化 Si 表面漂移区的杂质分布以抑制器件的结型场效应管 ( JFET) 效应，改善器件特性。 | A novel superjunction MOSFET structure was proposed, and the device performance wasimproved by optimizing the doping profile in the drift zone near Si surface and suppressing the junctionFET (JFET) effect. |
| 42214 | 首先通过技术计算机辅助设计 ( TCAD) 模拟并对比了新型超级结 MOSFET 和现有超级结 MOSFET 的电场强度分布、栅漏耦合电容随漏极电压的变化和开关过程， | The electric field strength distribution, the change of the gain-drain coupling capacitance with the drain voltage, and the switching process of the novel superjunction MOSFET and conventional superjunction MOSFET were simulated and compared by technology computer aided design(TCAD) . |
| 42215 | 发现 600 V 新型超级结 MOSFET 比现有 600 V 超级结 MOSFET 的击穿电压提高了 15 V、比导通电阻减小约 3%， | The simulation results show that compared with the 600 V convetional superjunction MOSFET, the 600 V new superjunction MOSFET has a 15 V higher breakdown voltage and 3% lower specific on-resistance. |