| ID | 原文 | 译文 |
| 42086 | 通过电连接检测及扫描电子显微镜 ( SEM) 等方法对焊点互连情况进行分析。 | The solder joint interconnection was analyzed by using electrical connection detection and scanning electron microscope (SEM) . |
| 42087 | 结果表明，Sn63Pb37 焊点阴极侧金属间化合物 ( IMC) 增长明显，表现出明显的极化现象， | The results show that intermetallic compound(IMC) at the cathode of Sn63Pb37 solder joint increases significantly, which shows obvious polarization. |
| 42088 | IMC 厚度的平方与通电时间呈线性关系。 | The square of IMC thickness shows a linear relationship with the operating time. |
| 42089 | 通电时间达到 576 h 后 Sn63Pb37 焊点阴极侧产生微裂纹，而 Sn10Pb90 焊点在通电 576 h 后仍未出现异常，表现出优异的电迁移可靠性。 | The micro cracks appear at thecathode of the Sn63Pb37 solder joint after 576 h, while no abnormal phenomenon is found in the Sn10Pb90solder joint after 576 h, showing an excellent electromigration reliability. |
| 42090 | 研究结果对于直径 100 μm 微焊点的陶瓷封装倒装焊器件的应用具有重要的意义。 | The research results are of great significance for the application of ceramic flip-chip devices with a diameter of 100 μm micro solder joints. |
| 42091 | 热退火技术是集成电路制造过程中用来改善材料性能的重要手段。 | Thermal annealing technology is an important method to improve material properties inthe integrated circuit manufacturing process. |
| 42092 | 系统分析了两种不同的退火条件 ( 氨气氛围和氧气氛围) 对 TiN/HfO2 /SiO2 /Si 结构中电荷分布的影响， | The effects of two different annealing conditions (ammoniaatmosphere and oxygen atmosphere) on the charge distribution of the TiN/HfO2 /SiO2 /Si structure weresystematically analyzed. |
| 42093 | 给出了不同退火条件下 SiO2 /Si 和 HfO2 /SiO2 界面的界面电荷密度、HfO2 的体电荷密度以及 HfO2 /SiO2 界面的界面偶极子的数值。 | The interface charge densities of the SiO2 /Si and HfO2 /SiO2 interfaces, the bulkcharge density of HfO2 and the value of the interface dipole at the HfO2 /SiO2 interface were given underdifferent annealing conditions. |
| 42094 | 研究结果表明，在氨气和氧气氛围中退火会使 HfO2 /SiO2 界面的界面电荷密度减小、界面偶极子增加，而 SiO2 /Si 界面的界面电荷密度几乎不受退火影响。 | The research results show that the interface charge density of HfO2 /SiO2interface decreases and the interface dipole increases, while the interface charge density of SiO2 /Si interface is hardly affected by annealing in ammonia atmosphere and oxygen atmosphere. |
| 42095 | 最后研究了不同退火氛围对电容平带电压的影响， | Finally, the effect ofdifferent annealing atmospheres on the flat-band voltage of the capacitor was studied. |