ID	原文	译文
42066	面向高速串行接口应用，设计了一款 25 Gibit / s 的大摆幅电压模逻辑发送器。	For high-speed serial interface applications, a large swing voltage mode logic transmitterof 25 Gibit / s was designed.
42067	输出驱动器由 3 个相同的子驱动器并联而成，且每个子驱动器都包含依据二进制权重递增的 5 个驱动单元，从而实现 32 种不同的去加重控制。	The output driver is composed of three identical parallel connected sliceswith five increasing binary-weighted driving segments to achieve 32 different de-emphasis controls.
42068	为了得到优化的均衡方案，且消除码间串扰的影响，提出了一种基于脉冲响应的后均衡分析策略。	Inorder to obtain an optimized equilibrium scheme and eliminate the effects of intersymbol interference, apost equilibrium analysis strategy based on pulse response was proposed.
42069	同时采用自偏置稳压器稳定电源电压，以提高发送器的信号完整性。	Meanwhile, a self-biased regulator was used to stabilize the supply voltage to improve the signal integrity of the transmitter.
42070	发送器基于 TSMC 40 nm 工艺仿真，版图面积为 132 μm×53 μm。	The transmitter with a layout area of 132 μm × 53 μm was simulated with TSMC 40 nm process.
42071	后仿真结果表明，发送器工作在 25 Gibit / s 时，差分输出眼图高达 1. 2 V，抖动为 2. 55 ps，功耗为 16. 2 mW。	The postsimulation results show that when operating at 25 Gibit / s, the transmitter shows a differential output eyediagram of up to 1.2 V, a jitter of 2.55 ps, and a power consumption of 16.2 mW.
42072	为研究自加热效应对绝缘体上硅 ( SOI) MOSFET 漏电流的影响，开发了一种可同时探测 20 ns 时瞬态漏源电流－漏源电压 ( Ids-Vds) 特性和 80 μs 时直流静态 Ids-Vds特性的超快脉冲I-V 测试方法。	An ultrafast pulse I-V test method to simultaneously detect transient drain-source currentdrain-source voltage (Ids-Vds) characteristics at 20 ns and DC static Ids-Vds characteristics at 80 μs wasdeveloped for investigating the influence of self-heating effects on leak current of silicon in insulator(SOI) MOSFETs.
42073	将被测器件栅漏短接、源体短接后串联接入超快脉冲测试系统，	The device under test was connected to the ultrafast pulse test system in series aftershort connections of gate-drain and source-body.
42074	根据示波器在源端采集的电压脉冲的幅值计算漏电流受自加热影响的动态变化过程。	According to the amplitude of the voltage pulse collected by oscilloscope at the source, the dynamic change process of drain current under the influence of selfheating was calculated.
42075	选取体硅 NMOSFET 和 SOINMOSFET 进行验证测试，并对被测器件的温度分布进行仿真，	Bulk-Si NMOSFETs and SOI NMOSFETs were selected for verification test, andthe temperature distribution of the devices under test was simulated.