ID	原文	译文
41876	并用相似的工艺方法制备金属－氧化物－半导体场效应晶体管 ( MOSFET) 作为比较，	The metal-oxide-semiconductor field effect transistor (MOSFET) was prepared by a similar process for comparison.
41877	分别基于两种器件构成基本电流镜电路，研究两种器件的基本性能和电路电流传输能力。	The basic current mirror circuits were formed based on thetwo devices respectively to study the basic properties of the two devices and the capability of the circuitcurrent transmission.
41878	两种器件均采用杂质分凝技术制备，	The TFET and MOSFET were prepared by the dopant segregation technology.
41879	在源漏与沟道的界面形成了陡峭的杂质分布，TFET 也因此具备陡峭的隧穿结。	The steep impurity distribution was formed at the interface between source-drain and channel, thus the TFEThad steep tunneling junction.
41880	两种器件的载流子输运机制不同，因此温度对电流的影响也不同，	The carrier transport mechanism of the two devices is different, so the influence of the temperature on the current is also different.
41881	此外，不同于 MOSFET 的单极导通行为，TFET 由于源漏两端均为重掺杂，表现为强烈的双极导通行为。	In addition, TFET shows a strong ambipolarconduction behavior due to the high doping concentrations at source and drain regions, which is differentfrom the monopolar conduction behavior of the MOSFET.
41882	测试发现，由 TFET 构成的电流镜电路的电流传输比高达 97%，高于一般的 TFET 电流镜和实验中用于对比的 MOSFET 电流镜，	The test shows that the current mirror circuitcomposed of TFET has a high current transter ratio of 97%, which is higher than the conventional TFETcurrent mirror, and also higher than that of the MOSFET current mirror used in the experiment.
41883	且 TFET 电流镜的输出阻抗较高，约 1 MΩ。	And the output impedance of the TFET current mirror reaches about 1 MΩ.
41884	这为 TFET 的研发与简单应用提供了参考。	It provides reference for the development and simple application of the TFET.
41885	近年来，电力机车、电动汽车和微波通信等行业发展迅速，系统所用的电子器件具有大功率、小尺寸、高集成和高频率等特点。	In recent years, electric locomotives, electric vehicles, microwave communications andother industries have developed rapidly, and electronic devices used in these systems have the characteristics of high power, small size, high integration and high frequency.