ID	原文	译文
41706	因此通过能量变化来分析底部填充过程以避免平均毛细压的计算。	Therefore, the underfill process was analyzed through the energychanges to avoid the calculation of the average capillary pressure.
41707	首先分析了底部填充过程中表面能的变化、动能的变化和流道壁面对流动的阻力损耗;	Firstly, the changes of surface energyand kinetic energy, and the resistance loss of the flow channel wall to the flow during the underfillprocess were analyzed.
41708	然后根据能量守恒定律得到了反映底部填充过程的新解析模型;	Then, a new analytical model reflecting the underfill process was obtainedaccording to the law of energy conservation.
41709	最后用计算流体力学( CFD) 软件对底部填充过程进行了三维数值模拟，以此验证了基于能量法的新解析模型。	Finally, the three-dimensional numerical simulation of theunderfill process was carried out using computational fluid dynamics (CFD) software to verify the newanalytical model based on the energy method.
41710	能量法更具有通用性，可用于研究焊点形状和排列方式复杂的倒装芯片底部填充过程。	The energy method is more general and can be used tostudy the underfill process of flip-chip with complex solder bumps shapes and arrangements.
41711	提出采用自隔离散热技术解决大功率倒装单片集成 LED 芯片散热与绝缘之间的矛盾问题。	The self-isolation heat dissipation technology was proposed to solve the contradiction between heat dissipation and insulation of high power flip-chip monolithically integrated LED chip.
41712	基于自隔离散热技术原理，利用微纳加工技术，通过在 AlN 陶瓷基板上生长隔离金属岛制备自隔离散热基板。	Based onthe principle of self-isolation heat dissipation technology, the self-isolation heat dissipation substrate wasprepared by growing isolated metal islands on the AlN ceramic substrate using micro-nano fabricationtechnology.
41713	采用多胞串并联网络结构设计大功率倒装单片集成 LED 芯片，芯片尺寸为1.5 mm×4. 5 mm。	The high power flip-chip monolithically integrated LED chips were designed using multi-cellseries and parallel structures, and the chip size was 1. 5 mm × 4. 5 mm.
41714	在 200 mA 的驱动电流下，大功率倒装单片集成 LED 芯片的正向电压为8.3 V，反向漏电流小于 100 nA。	At the driving current of 200 mA, the forward voltage of the high power flip-chip monolithically integrated LED chip is 8. 3 V, and the reverse leakage current is less than 100 nA.
41715	当输入电流为 2 A 时，大功率倒装单片集成 LED 芯片的输入功率为 20 W，其最大光输出功率为 8. 3 W，插墙效率为 42. 08%，峰值热阻约为1.23 K/W，平均热阻约为 1. 17 K/W。	When the input current is 2 A, the input power ofthe high power flip-chip monolithically integrated LED chip is 20 W, and the maximum optical outputpower of the chip is 8. 3 W, the wall-plug efficiency can reach 42. 08%, the maximum thermalresistance is about 1. 23 K/W and the average thermal resistance is about 1. 17 K/W.