| ID | 原文 | 译文 |
| 41516 | 测试结果表明，人体模型 ( HBM) ESD 防护能力可达 4 kV，泄漏电流为 25. 45 nA。 | The test results show that the ESD protection abilityof the human body model (HBM) can reach 4 kV and the leakage current is 25.45 nA. |
| 41517 | 设计并流片实现了一款具有寄生电阻消除功能的远端测温芯片。 | A remote temperature measurement chip with parasitic resistance cancellation functionwas designed and implemented. |
| 41518 | 分析了远端测温原理和寄生电阻对测温精度的影响， | The principle of remote temperature measurement and the influence ofparasitic resistance on the temperature measurement accuracy were analyzed. |
| 41519 | 利用差分结构采集远端三极管产生的温度信号。 | The differential structure was used to collect the temperature signal generated by the remote transistor. |
| 41520 | 采用一阶 Σ-Δ模数转换器 ( ADC) 将温度信号进行量化， | The first-order Σ-Δ analogto-digital converter (ADC) was used to quantify the temperature signal. |
| 41521 | 并使用寄生电阻消除技术降低寄生电阻对测温精度的影响。 | Meanwhile the parasitic resistance cancellation technology was used to reduce the influence of parasitic resistance on the temperaturemeasurement accuracy. |
| 41522 | 该芯片采用 0. 18 μm BCD 工艺设计并流片， | The chip was designed and fabricated by 0.18 μm BCD process. |
| 41523 | 测试结果表明，当远端三极管在－40 ℃ 下，使用寄生电阻消除技术可以将 1. 5 kΩ 寄生电阻对测温精度的影响降低到 0. 5 ℃ 以内; | The measurement results show that when the remote transistor is at －40 ℃, the influence of 1.5 kΩ parasitic resistance on the temperature measurement accuracy is reduced to less than 0.5 ℃ using the parasitic resistance cancellation technology. |
| 41524 | 远端三极管在－40～125 ℃温度范围内，消除寄生电阻影响后远端测温芯片的 3σ 误差小于±0. 6 ℃。 | When the remote transistor is at the temperature range of －40－125 ℃, the 3σ error of the remote temperature measurement chip is less than ± 0.6 ℃ after cancelling theinfluence of parasitic resistance. |
| 41525 | 基于推推振荡器结构设计了一种低相位噪声的毫米波压控振荡器， | A millimeter wave voltage controlled oscillator (VCO) with low phase noise was designedbased on the structure of the push-push oscillator. |