| ID | 原文 | 译文 |
| 2853 | 理论和实验表明，主密钥(t，s，k，n)分存可高效求解; | Theoretical and experimental results show , master key based(t, s, k, n)scheme can be solved efficiently. |
| 2854 | 随机参与值可避免参与者编号泄露，分发信息的篡改和认证比特的揣测; | Random participation values avoid the disclosure of participant numbers and prevent tampering distributed information or guessing authentication bits. |
| 2855 | 多版本备份可对备份图高置信度地恢复;而限制性双重认证在认证能力上不低于双认证自修复图像分存。 | M ulti-version backup strategy can restore backup images with high confidence while au-thentication capability of restricted double authentication strategy is no less than that of double authentications basedself-recovery image sharing scheme. |
| 2856 | 绝缘栅双极晶体管(IGBT)是微电子学研究的热点之一，而相关电路仿真迫切需要该器件的等效模型。 | Insulated gate bipolar transistor(IGBT)is one of the hot topics in microelectronics research. The related cir-cuit simulation urgentlyneeds the equivalent model of the device. |
| 2857 | 本文提出基于傅里叶解双极扩散方程(ADE)的 1200V 场终止型 IGBT 物理模型，通过 RC 电路等效漂移区载流子分布，精确求解双极扩散方程。 | The physical model of the 1200V field-stop IGBT solvingambipolar diffusion equation(ADE)based on the Fourier transformis proposed in this paper. The ADE is solved accurately by the distribution of carriers in equivalent drift region of the RC circuit. |
| 2858 | 该模型针对大功率 IGBT 的工作原理，采用大注入假设条件，在综合分析场终止层的同时，根据 1200V 场终止型 IGBT 的特点考虑漂移区载流子的复合效应。 | The model is based on the working principle of high-power IGBT. The high-level injection hypothesis is used. The complex effect of the 1200V field-stop IGBT is considered ac-cording to the characteristics of the 1200V field-stop IGBT. |
| 2859 | 在提取器件模型所需的关键参数后，用实际 IG-BT 的测量结果对该模型的仿真结果进行了验证，通过分析静态以及关断瞬态特性曲线，仿真与实验数据误差均值小于 8% ，证明所建模型及参数提取方法的精确度。 | After extracting the key parameters of the model, the simulation re-sults are verified by the actual measurement results. The average error of simulation and experiment is less than 8% . The accu-racy of the model and parameter extraction method is proved by analyzing the static and turn-off transient characteristics. |
| 2860 | 互连结构是电子器件与印刷电路板之间机械固定及电气互联的关键部位。 | The interconnection structure is a key part between the electrical device and the printed circuit board as the mechanical fixing and electrical interconnection. |
| 2861 | 针对当前互连结构退化过程监测困难与表征信号难以提取问题，首先，通过分析 QFP 封装互连结构的失效模式及机理，建立其退化电气模型。 | Aiming at the difficulties in real-time monitoring and extracting character-ization signals for the health status of interconnects, firstly, a degenerate electrical model was established in this paper, by an-alyzing the failure modes and mechanisms of the QFP interconnect structure. |
| 2862 | 在此基础上，搭建实时监测电路，选取外接电容的充电时间为表征信号，并建立退化电气模型参数与充电时间的关系。 | Then, according to the degraded electrical mod-el of the interconnect structure, a real-time monitoring circuit was built, with the charging time of the external capacitor se-lected as the characterization signal, and the relationship between the electrical parameters of the degradation model and thecharging time was established. |