| ID | 原文 | 译文 |
| 713 | 针对辐射源识别中噪声敏感和识别能力不足等问题，提出了一种基于核空间时频特征与栈式稀疏降噪自编码网络的识别系统。 | To enhance the classification performance and noise sensitivity of emitter signal recognition, a recognition system based on kernel space time-frequency feature and stacked sparse denoising auto-encoders (SSDAE)is proposed. |
| 714 | 通过时频变换、稀疏域降噪和核空间降维投影降低噪声干扰和特征冗余， | Firstly, the noise interference and feature redundancy reduced by time-frequency transform, sparse-domain denoising and ker-nel space dimensionality reduction. |
| 715 | 基于降噪自编码与稀疏自编码思想构建栈式稀疏降噪自编码识别网络。 | Then, it is based on the idea of sparse auto-encoder (SAE)and denoising auto-encoder(DAE), an SSDAE based recognition network is constructed. |
| 716 | 实验结果表明系统在识别率和时效性上综合性能最优，能够显著降低噪声敏感性，低信噪比环境下适应性较强。 | Experimental results show that the system has the best com-prehensive performance in recognition rate and time efficiency, which can significantly reduce noise sensitivity and improvelow SNR environment adaptability. |
| 717 | 当信噪比为 － 12dB 时，系统对 8 类辐射源信号的整体平均识别率达到 96.75% 。 | When the SNR is － 12dB, the overall average recognition rate of the system for the 8types of emitter signals reaches 96. 75% . |
| 718 | 本文制备并研究了肖特基型 β-Ga2O3日盲紫外光电探测器。 | In this work, we fabricate and investigate the Schottky β-Ga2O3solar-blind UV photodetectors. |
| 719 | 结果表明：通过脉冲激光沉积外延生长的β-Ga2O3的(-201)晶面 X 射线衍射峰半高宽仅为 36 arcsec，表现出了高的晶体质量; | The results show that full width at half maximum of the X-ray diffraction peak from (-201)plane of the β-Ga2O3grown by pulsed laserdeposition is only 36 arcsec, indicating that the epitaxial β-Ga2O3has a high crystal quality. |
| 720 | 光暗条件下的 I-V 曲线显示所制备的器件具有明显的肖特基整流特性，在 － 5V 偏压下暗电流保持在 0.1nA 量级，正向导通电压为 1.5V; | The fabricated Schottky diodes based on the β-Ga2O3exhibits obvious Schottky rectification characteristic, and the dark current maintains at 0. 1 nA magni-tude under － 5 V bias voltage, and forward conduction voltage is 1. 5 V. |
| 721 | 光电流谱显示器件在 240nm 处存在显著的峰值响应，并在 260nm 左右呈现陡峭的截止边，日盲紫外的带内带外抑制比达到 1000。 | The photocurrent spectrum show that the device ex-hibits remarkable peak response at 240 nm, a steep cutoff wave length at 260 nm, and a rejection ratio of 1000 between in-band and out-band of solar-blind ultraviolet. |
| 722 | 同时，也研究了不同掺杂对 Ga2O3晶体质量的影响。 | Meantime, the effects of different dopants on the crystal quality of β-Ga2O3 are also studied. |