ID 原文 译文
2583 首先介绍了场景分类技术的背景、应用场景以及发展现状; First, the background, application and development situation is introduced.
2584 然后基于特征提取、语义分析和机器学习的角度分别对国内外的相关研究进行系统的分析、比较及总结; Then, the related researches both at home and overseasare analyzed, compared and summarized from the perspectives of feature extraction, semantic analysis and machine learning.
2585 最后对目前研究所面临的问题和未来技术的发展给出总结与展望。 Finally, the problems that the current researches are facing and potential future development are discussed.
2586 当电台处于外界复杂电磁环境中，会有多种频率的干扰信号同时作用， The communication station will be affected by interference signals of multiple frequency in complex elec-tromagnetic environment.
2587 如果信号强度足够，即便落于带外也有可能造成电台阻塞，使其接收不到有用信号而失去作战效能。 Assuming the interference signal is strong enough, the communication station will be blocked evenif the interference signal is out of band, which makes it unable to receive useful signal and lose combat effectiveness.
2588 带外信号造成接收机阻塞所需的能量高，利用矢量法将有用信号和干扰信号进行矢量叠加，通过推导得到相应的干扰预测模型。 Theout-of-band signal needs significant energy to block receiver;so we can use vector superposition method to analyze useful signal and interference signal, from which the interference prediction model can be derived.
2589 利用两套独立的干扰发射系统进行双频干扰试验，试验前要对试验系统进行调整，之后再分别以误码率 0.1 和受试电台接收不到链路测试作为临界干扰判别标准进行两次试验， Conducting dual-frequency inter-ference test by two independent interference transmission system, and the system should be adjusted before the test. Taking error rate to be 0. 1 and no link test as the critical interference criterion respectively, and then two independent tests are con-ducted.
2590 试验结果表明以上模型能够预测受试设备是否达到临界干扰状态，预测误差在 2dB 以内，同时以上两种临界干扰标准均适用。 The test result shows that the presented model is able to predict whether or not the equipment under test reaches criti-cal interference state, and the prediction error is within 2dB. This model applies to both critical interference criteria.
2591 研究体偏置效应对超深亚微米绝缘体上硅(SOI，Silicon-on-insulator)器件总剂量效应的影响。 The impact of body effect on the total dose effect of ultra deep sub micron SOI devices is studied.
2592 在 TG 偏置下，辐照 130nm PD(部分耗尽，partially depleted)SOI NMOSFET(N 型金属-氧化物半导体场效应晶体管，n-type Met-al-Oxide-Semiconductor Field-Effect Transistor)器件，监测辐照前后在不同体偏压下器件的电学参数。 130nm SOINMOSFET devices were irradiated in TG bias state, the electrical parameters of devices before and after irradiation were moni-tored under different body bias. The short channel PD SOI NMOS devices are more sensitive to total dose radiation, and the larger channel width to length ratio of devices will cause more damage.