ID	原文	译文
2063	实体关系抽取是知识库构建中至关重要的一个环节。	Entity relation extraction is a crucial part of knowledge base construction.
2064	在众多的实体关系抽取方法中，远程监督结合神经网络模型的方法在准确率等性能上是比较令人满意的，	Among many methods of rela-tionship extraction, the method of distant supervision combined with neural network model is satisfactory in terms of accura-cy and other performance.
2065	但远程监督获取的标注语料中往往存在大量的噪声数据，给实体关系抽取模型的训练带来了很大的影响。	However, there is often a large amount of noise data in the labeled corpus obtained by distant su-pervision, which has a great impact on the training of relationship extraction model.
2066	本文提出一种基于改进注意力机制的卷积神经网络实体关系抽取模型。	In this paper, we propose an entity rela-tionship extraction model of convolutional neural network based on improved attention mechanism.
2067	该模型针对包含同一实体对的句子集合，从中尽可能地找出所有体现该实体对关系的正实例，构建组合句子向量，抛弃可能的噪声句子，从而最大程度地降低噪声句子的影响又能充分利用正实例的语义信息。	Aiming at the sentenceset containing the same entity pair, this model tries to find out all the positive instances that embody the relationship betweenthe entity pair, construct the combined sentence vector, and discard the possible noise sentences, so as to minimize the impactof noise sentences and make full use of the semantic information of positive instances.
2068	实验证明，本文提出的关系抽取模型在准确率上优于对比的关系抽取模型。	Experimental results show that the ac-curacy of the proposed relation extraction model is better than that of the comparative relation extraction model.
2069	绝缘体上硅(Silicon-on-Insulator，SOI)器件的全介质隔离结构改善了其抗单粒子效应性能，但也使其对总剂量效应更加敏感。	The fully dielectric isolation structure of Silicon-on-Insulator (SOI)devices improves their immunity tosingle event effects, but also makes them more sensitive to total ionizing dose (TID)effects.
2070	为了评估 SOI 器件的总剂量效应敏感性，本文提出了一种基于 TCAD (Technology Computer Ai-ded Design)的总剂量效应仿真技术。	In order to evaluate the sensi-tivity of SOI devices to TID effects, a simulation method based on TCAD (Technology Computer Aided Design)was pro-posed.
2071	通过对 SOI 器件三维结构进行建模，利用 TCAD 内置的辐射模型开展瞬态仿真，模拟氧化层中辐射感应电荷的产生、输运和俘获过程，从而分别评估绝缘埋层(Buried Oxide，BOX)和浅沟槽隔离(Shallow Trench Isolation，STI)氧化层中辐射感应陷阱电荷对器件电学性能的影响。	By modeling the three-dimensional structure of SOI devices and using the TCAD built-in radiation model to simulatethe generation, transport and capture of radiation-induced charges in oxide layer, the effects of radiation-induced trap chargesin buried oxide (BOX)and shallow trench isolation (STI)oxide on the electrical properties of SOI devices are evaluatedrespectively.
2072	基于该仿真技术，本文分别研究了不同偏置、沟道长度、体区掺杂浓度以及 STI 形貌对 SOI MOSFET 器件总剂量辐射效应的影响。	Based on this simulation technique, the effects of radiation bias, channel length, body doping concentration andSTI morphology on TID effect of SOI MOSFET were investigated.