ID	原文	译文
15495	因此,降低低压箔的孔喉比参数是提升腐蚀箔性能的一个策略。	Therefore, it is a strategy to improve the performance of low-voltage etched foil by reducing the pore-throat ratio.
15496	设计了一种高精度、宽频率范围的张弛振荡器。	A relaxation oscillator was designed with high precision and wide-range frequency.
15497	利用两级运放组成负反馈回路,将振荡器输入端电压钳位,通过调整外接电阻调节电容充电电流;	The potential at the input of the relaxation oscillator was clamped by a negative feedback loop that is composed of two-stage operational amplifiers. The capacitor charging current could be adjusted by changing the external resistance.
15498	主振荡电路采用三端比较器设计,结构简单易于实现;	The main oscillation circuit use a three-terminal comparator, and the structure is simple and easy to realize.
15499	针对电源系统多相分布应用需求,设计了模式选择电路,可实现片外时钟同步模式工作。	A mode selection circuit was designed to meet the demand of multi-phase distribution in power system, which can realize off-chip clock synchronization.
15500	电路采用0.25 μm 60 V BCD工艺实现。	The circuit was fabricated by the 0.25 um 60 V BCD technology.
15501	仿真结果表明,振荡器在不同温度(-55～125℃)及不同电源电压(3～5.5 V)条件下,频率偏移率低于2%;在电阻调节模式下,其中心频率为582 kHz,可调节频率范围为100 kHz～2.5 MHz;	The simulation results show that the frequency deviation of the oscillator is less than 2% at different temperature from -55 ℃ to 125 ℃ and power supply voltages from 3 V to 5. 5 V In the resistance adiusting mode. the central frequency is 582 kHz. and the adiustable frequency is from 100 kHz to 2. 5 MHz.
15502	当用作锁相环压控振荡器时,可捕获频率范围为300 kHz～2.2 MHz。	When used as a voltage controlled oscillator for phase locked loop, the acquisition frequency is from 300 kHz to 2. 2 MHz.
15503	基于Cree公司GaN HEMT设计了一款适用于3.45 GHz 5G通信的Doherty功率放大器,其中,载波放大器工作于深AB类,峰值放大器偏置于C类。	The design of a high efficiency power amplifier based on Cree's GaN HEMT technology was presented, which is suitable for 5G communication and operates at 3. 45 GHz.
15504	后仿真表明该放大器小信号增益为13 dB,饱和输出功率大于44.85 dBm(30 W),在饱和点的功率附加效率(PAE)为73.5%。	The carrier amplifier works in deep class AB and the peak amplifier is biased in class C. Post-simulation shows that the small signal gain of the amplifier is 13dB, the saturated output power is greater than 44. 85 dBm (30W), and the power added efficiency (PAE) at the saturation point is 73. 5 %.