ID	原文	译文
15445	设计了一种选频网络,实现宽频率范围内高精度输出,满足MCU对多种时钟频率的需求。RC振荡器基于SMIC 110 nm CMOS工艺设计,并完成Cadence Spectre后仿真验证。	A frequency selection network was designed to achieve high－precision output in a wide frequency range to meet the needs of MCU for a variety of clock signals． The oscillator wasimplemented in SMIC 110 nm CMOS technology and analyzed with Cadence Spectre simulator．
15446	结果表明,在1.2 V电源电压、TT工艺角、27℃室温环境下,RC振荡器输出频率为16 MHz,动态功耗为47μW;在1～1.3 V的电源电压变化范围内,输出频率的变化范围在±0.19%以内;在-30～120℃温度变化范围内,输出频率的变化范围在±0.13%以内。	Post－layout simulation results show that the output frequency of RC oscillator is 16 MHz and the dynamic power consumption is 47 μW at 1. 2 V powersupply voltage，process angle TT and room temperature; In the power supply voltage ranges from 1 V to 1. 3 V，the outputfrequency of RC oscillator changes within ± 0. 19%; When the temperature changes from － 30 ℃ to 120 ℃，the outputfrequency of the RC oscillator changes within ±0. 13%．
15447	同相似结构RC振荡器相比,该RC振荡器的输出频率受温度影响较低,稳定性较高,适合高稳定性MCU的应用。	Compared with other oscillators with the similar structure，the outputfrequency is less affected by temperature and has higher stability，which is suitable for high－stability MCU applications．
15448	为解决传统达林顿结构的单片射频放大器线性度低和高低温下静态电流变化大的问题,设计了动态偏置电路和有源偏置电路来提高放大器的线性度和稳定静态电流。	To solve the problem of low linearity and large quiescent current variation of the traditional Darlington monolithicRF amplifier，a dynamic bias circuit and an active bias circuit were designed to improve the linearity of the amplifier and tostabilize the quiescent current．
15449	同时,为了扩展放大器的带宽和提高增益平坦度,设计了负反馈电路结构。	Meanwhile，a negative feedback circuit was also designed to expand the bandwidth of theamplifier and improve the gain flatness．
15450	基于2μm磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)工艺和达林顿结构,设计了单片微波放大器。	Based on the 2 μm InGaP/GaAs HBT process and Darlington structure，a monolithicmicrowave amplifier was designed with above circuit structures．
15451	电磁仿真结果表明：在5 V电压供电下,静态功耗为0.17 W,本放大器在0.05～10 GHz频率范围内,小信号增益最大为21 dB,输出功率三阶交调点最大为31.1 dBm,输出功率1dB压缩点最大为16.1 dBm,回波损耗均小于-10 dB,高低温下静态电流波动±1.5 mA。	The electromagnetic simulation results show that the staticpower consumption is 0. 17 W at the power supply of 5 V． From 0. 05 GHz to 10 GHz，the maximum small signal gain is 21 dB，the maximum output power third－order intermodulation point is 31. 1 dBm，the maximum output power 1 dB compression pointis 16. 1 dBm，the return loss is less than －10 dB，and the quiescent current fluctuates ±1. 5 mA as temperature varies．
15452	为了满足便携式电子设备的需求,设计了一种低漏失高稳定的LDO。	In order to meet the needs of portable electronic devices，a low leakage and high stability LDO was designed．
15453	利用正反馈环路钳位电压,获得高精度采样电流。	High precision sampling current was obtained by using positive feedback loop clamp voltage．
15454	通过调整工作在深线性区的MOS管的等效电阻,产生跟踪负载电流的零点。	By adjusting the equivalentresistance of the MOS tube in the deep linear region，a zero tracking of the load current was generated．