ID 原文 译文
1633 提高射频功率器件的鲁棒性有利于增强器件的抗静电放电能力和抗失配能力。 Improving the ruggedness of radio frequency power device is beneficial to enhance the ability of withstan-ding electro-static discharge (ESD)and output mis-match.
1634 为了直观地了解器件内部发生的电学过程，本文研究了高鲁棒性 N 型沟道 RF-LDMOS (Radio Frequency Lateral Diffusion MOS)在 TLP (Trans-mission Line Pulse)应力下的电学机理。 To understand the electrical process happened in device intuitive-ly, the electrical mechanism of state-of-art high-ruggedness N-channel RF-LDMOS (Radio Frequency Lateral DiffusionMOS), under TLP (Transmission Line Pulse)stress, has been studied.
1635 利用 0.18μm BCD (Bipolar/CMOS/DMOS)先进制程，实现了特定尺寸器件的设计与流片。 RF-LDMOS FETs with different gate widths hadbeen manufactured using advanced 0. 18μm BCD (Bipolar/CMOS /DMOS)process.
1636 通过实测与仿真的对比，发现静电放电失效的随机性、芯片内部的热效应是导致仿真和实测差异的非理想因素。 It is found that the different failurepoints of simulation and measurement are coming from the random failure of ESD stress and thermal problems.
1637 通过对 TLP 仿真的各阶段重要节点的分析，证明了源极下方的 P 型埋层有利于提高空穴电流的泄放能力，从而提高 RF-LDMOS 的鲁棒性。 The simula-tion results of different nodes under TLP stress proved that the P buried layer under source area plays an important role inholes flowing, and improves the ruggedness of RF-LDMOS.
1638 硅通孔(Through-Silicon Via，TSV)在制造过程中发生开路和短路等故障会严重影响 3D 芯片的可靠性和良率，因此对绑定前的 TSV 进行故障测试是十分必要的。 Through-Silicon Via (TSV)is prone to introduce resistive open and leakage faults during the manufactur-ing process, which will seriously affect the reliability and yield of 3D chips, so the pre-bond TSV testing seems necessary.
1639 现有的绑定前 TSV 测试方法仍存在故障覆盖不完全、面积开销大和测试时间大等问题。为解决这些问题，本文介绍一种基于边沿延时翻转的绑定前 TSV 测试技术。 Existing pre-bond TSV testing methods still have some problems, such as incomplete fault coverage, large area overhead andlarge testing time. To tackle these problems, an edge transition delay based pre-bond TSV testing method is proposed in This paper.
1640 该方法主要测量物理缺陷导致硅通孔延时的变化量，并将上升沿和下降沿的延时分开测量以便消除二者的相互影响。 This method mainly measures the variation of TSV delay caused by physical defects, and separates the rising and fall-ing edges to eliminate the interaction between them.
1641 首先，将上升沿延时变化量转化为对应宽度的脉冲信号; Firstly, the variation of rise-time delay is transformed into a pulse signal with corresponding width;
1642 然后，通过脉宽缩减技术测量出该脉冲的宽度; then, the pulse width is measured by pulse width reduction technology;