ID 原文 译文
1173 首先给出一种观测域多维度参考帧的多假设重构算法(MD-MRF-MH)及其最优相似块个数设置方案; In our approach, we firstly develop a multi-hypothesis reconstruction algorithm based on multi-dimension reference frames in meas-urement domain(MD-MRF-MH)and a kind of setting scheme for optimal similar block.
1174 然后给出一种像素域多假设参考帧的重构算法(PD-MRF-MH)及一种高性能双匹配准则; Then, multi-hypothesis reconstruc-tion algorithm based on multi-dimension reference frames in pixel domain(PD-MRF-MH)and a double matching criterionto improve matching accuracy are proposed.
1175 最后介绍了视频信号运动特征判定方案及多假设-双稀疏重构的具体实现方案。 Finally, we develop a strategy to determine the video motion feature and intro-duce the scheme of multi-hypothesis-dual-sparsity reconstruction.
1176 仿真实验表明，本文所提多假设-双稀疏重构算法相对于目前较好的多假设预测重构算法 2sMHR 及组稀疏重构算法 SSIM-InterF-GSR，重构性能平均提升了 1.98dB 和 0.84dB。 Simulation results show that the proposed VF-MH-DSRoutperforms the existing state-of-art compressed video sensing reconstruction algorithms 2sMHR and SSIM-InterF-GSR by1. 98dB and 0. 84dB respectively.
1177 文章阐述了用精确的 GaN Angelov 模型设计了一款 L 波段 400W 内匹配率放大器。 This paper describes a L-band 400W gallium nitride (GaN)internally matched power amplifier using anaccurate large signal Angelov model.
1178 选用 SiC 衬底的GaN 器件是为了获得大功率输出以及高效率性能。 The large gate-periphery GaN devices on SiC substrate are used for achieving the largeoutput power and high efficiency.
1179 为了精确设计放大器，采用脉冲 I-V 测试和多偏置的 S 参数测试建立起高压 GaN 大信号模型。 For designing exactly the power amplifier, the large signal GaN model is founded using measured pulse I-V and S parameters of different bias conditions.
1180 采用模型设计的 GaN 放大器输入输出电路集成在 17.4mm × 24mm 的封装管壳里。 Based on the large signal model, the input and outputmatching circuits and one 55mm GaN transistor are integrated in a 17. 4mm × 24mm ceramic package.
1181 最终采用单枚 55mm 栅宽 GaN 管芯设计的放大器在 48V 漏压，100μs 脉宽，10% 占空比偏置下在 1.2 ～ 1.4GHz 输出功率大于400W，功率增益大于 15dB，最高功率附加效率达到 81.3% ， The amplifier finallyhas the pulse output power of over 400W, the power gain of over 15dB across the band of 1. 2-1. 4GHz and the max power added efficiency is 81. 3% under the pulse drain bias voltage (Vds)of 48V, the duty is 10% with the pulse width of 100μs.
1182 这是国内 L 波段 400W 微波功率放大器的最高效率报道，验证了模型的准确度，实现了极好的电路性能。 The results show that the character of realized amplifier is consistent with the simulation result, which fully indicatesthe veracity of the developed model. And this is the most highest efficiency of a 400W power amplifier achieved in L-band.