ID 原文 译文
58578 辅助注意力模块对同一场景中的行人进行影响力分配,使网络可以充分利用行人交互信息,提升模型的准确性。 Three social features are set to enrich pedestrian interaction information which assists the attention module to make full use of the most of pedestrian interaction information by allocating the influence of pedestrians in the scene, so that the accuracy of the model is improved.
58579 多个数据集上的实验结果表明,该模型较之前基于池化模块行人轨迹预测模型的准确率平均提高15%,且在行人密集、非直线轨迹多的场景中准确率提升34%,效果更加明显。 Experimental results on multiple datasets show that the accuracy of this model in the pedestrian trajectory prediction task is increased by 15% compared with the previous pedestrian trajectory prediction model based on the pooling module. The improvement effect is most obvious in scenes with dense pedestrians and lots of non-straight tracks, with the accuracy increased by 34%.
58580 针对长约束非递归系统卷积码识别性能随约束长度增加而迅速恶化的问题,提出一种基于码型转换的识别方法。该方法适用于1/2长约束非递归系统卷积码及以其为母码的(n-1)/n删除卷积码。首先根据编码原理,利用编码数据构造一种码长约为原卷积码约束长度1/n的线性分组码;然后求取该线性分组码的校验矩阵,进而从校验矩阵中重构原卷积码的生成多项式。 A coding parameters identification method is proposed, which is suitable for long constrained non-recursive systematic convolutional codes with a code rate of 1/2 and (n-1)/n obtained by puncturing the 1/2 code as the mother code. First, according to the coding principle, a linear block code with a code length of about 1/n of the original convolutional code constrained length is constructed by using the coding data; then, the check matrix of the linear block code is obtained, and the generator polynomial of the original convolutional code is reconstructed from the check matrix.
58581 对IESS309中涉及到的两种长约束非递归系统卷积码进行仿真试验。 Simulation experiments are carried out for two convolutional codes involved in IESS309.
58582 相对于现有方法,当码率为1/2时,识别性能约改善了1 dB;当码率为2/3和3/4时,改善程度均超过了2 dB。 Compared with the existing method, when the code rate is 1/2, the recognition performance is improved by about 1dB; when the code rate is 2/3 and 3/4, the improvement is more than 2dB.
58583 仿真结果表明,与现有方法相比,所提方法具有更好的识别性能。 Simulation results show that the proposed method is more effective than the existing method.
58584 采用100 nm GaN高电子迁移率晶体管工艺,研制了一款应用于W波段的高功率密度功率放大器微波单片集成电路 。 A high power density monolithic microwave integrated circuit (MMIC) power amplifier is presented for W band application.
58585 该工艺采用厚度为50 μm 的SiC作为衬底。 The chip is fabricated using the 100 nm GaN high electron mobility transistor (HEMT) technology on a 50 μm SiC substrate.
58586 放大器采用三级级联拓扑结构,利用高低阻抗微带线与上下极板电容构成W波段低损耗阻抗匹配网络,实现较高的增益和较高的输出功率。 The amplifier is designed for a high gain and high output power with three stage topology and low-loss impedance matching networks designed with high and low characteristic impedance micro-strips and metal-insulator-metal (MIM) capacitors.
58587 同时,该放大器通过由1/4波长微带线构成的直流偏置网络进行片上集成设计,实现全单片集成。 And quarter-wave micro-strips are employed for the DC bias networks, while the power amplifier is also fully integrated with bias networks on the wafer. Measurement results show that, at the drain bias of 15 V, the amplifier MMIC achieves a typical small signal gain of 20 dB within the frequency range of 88~98 GHz.