| ID | 原文 | 译文 |
| 44286 | 该异质结器件在电压脉冲扫描下显示出双极性的电阻变换效应，并且具有长时间的数据保持能力。 | The device with Pt /NBFO /NSTOheterojunction exhibits bipolar resistance switching effect and long data retention under pulse voltagescanning. |
| 44287 | 且改变脉冲电压的大小可获得多级电阻态，在多级非易失性存储器方面有着较高的潜在应用价值。 | Moreover, the multilevel resistance states can be obtained by changing the magnitude of Set orＲeset pulse voltages, which shows a high potential application for multilevel nonvolatile memory. |
| 44288 | 对其电输运特性的分析表明，该异质结电阻变换可能来源于NBFO 的铁电场效应作用，从而改变 NBFO /NSTO 异质结的耗尽层宽度和势垒高度以实现电阻变换。 | It is concluded that the observed resistive switching behavior in the Pt /NBFO /NSTO heterostructure is relatedto the modulation of NBFO /NSTO interface＇s depletion width and barrier height, which is caused by theNBFO ferroelectric polarization field effect. |
| 44289 | 详细分析了现有技术中半导体芯片与阳极钼片欧姆接触技术的优缺点，提出了一种全新的特高压晶闸管焊接技术。 | The advantages and disadvantages of ohmic contact technology between semiconductorchip and anode Mo in the prior art were analyzed in detail, and a new welding technology of ultra-highvoltage thyristor was proposed. |
| 44290 | 采用特殊的焊料，利用金属原子间微扩散键合的原理，将半导体芯片与钼片牢固地焊接在一起，形成良好的欧姆接触。 | According to the principle of micro-diffusion bonding between metal atoms, the semiconductor chip and anode Mo were welded firmly using a particular welding material to forman excellent ohmic contact. |
| 44291 | 采用欧姆接触技术制备了两种不同结构的样品，并对其进行电性能测试和可靠性试验。 | Two samples of different constructions were prepared with ohmic contact technology, and the electrical performance test and reliability test were carried out. |
| 44292 | 结果表明，与采用压接技术的样品相比，采用欧姆接触技术的样品在流 过 相 同 的 电 流 ( 8 000 A) 时，具 有 更 小 的 通 态 压 降 ( 2. 423 V) 和更小的热阻值( 0. 004 66 K·cm2 /W) ， | The results indicate that the sample with ohmic contact technology has lower on-state voltage drop (2.423 V) and lower thermalresistance (0.004 66 K·cm2 /W) under the same current (8 000 A) than the sample with pressing technology. |
| 44293 | 晶闸管性能和可靠性得到全面提高。 | The performance and reliability of the thyristor are improved totally. |
| 44294 | 采用此技术研制的 6 英寸 ( 1 英寸 =2. 54 cm) 5 500 A/ 8 500 V 特高压焊接技术晶闸管已成功应用于我国某特高压直流输电工程中。 | The 6-inch (1 inch =2.54 cm) 5 500 A /8 500 V ultra-high voltage thyristor with the welding technology has been successfullyapplied to an ultra-high voltage direct current project in China. |
| 44295 | 基于可靠性试验所用的菊花链测试结构，对所设计的扇出型封装结构进行了完整的菊花链芯片制造及后道组装工艺制造， | Based on the daisy chain test structure used in the reliability test, a complete daisy chainchip fabrication and the post-assembly process were carried out for the fan-out package structure. |