ID 原文 译文
44276 抛光后测试了介质层的电学特性，结果显示，电阻值为 1. 49 kΩ，漏电流为 pA 级，满足 300 mm 铜布线工业化生产的要求。 The electrical properties of the dielectric material were tested.The result sshow that the resistance is 1.49 kΩ and the current leakage is of pA scale, which meets the 300 mm Cupattern wafer industrial production demands.
44277 设计了一种三维 ( 3D) 硅基电容器，采用原子层沉积 ( ALD) 技术制备了钨 ( W)薄膜电极。 A three dimensional (3D) silicon-based capacitor was designed, and its electrodes oftungsten (W) thin films were fabricated by using the atomic layer deposition (ALD) technology.
44278 通过 X 射线光电子能谱 ( XPS) 、X 射线衍射 ( XＲD) 、扫描电子显微镜 ( SEM) 和电学分析仪对薄膜进行表征， The thin films were characterized by the X-ray photoelectron spectroscope (XPS) , X-ray diffraction (XＲD) , scan electronic microscope (SEM) and electrical analyzer.
44279 研究了 W 薄膜电学性能的影响因素和作用机制。 The influence factors and mechanisms of electrical properties of W thin films were investigated.
44280 XPS 测试结果表明，W 薄膜组分主要为 W—W 键金属态，测得其电阻率为 77 μΩ·cm，达到现有技术水平。 The XPS test results show that the W thin films aremainly composited of W—W bonds in metal states, and the resistivity is 77 μΩ·cm, which reaches thecurrent level of technology.
44281 由晶相分析可知，原子层沉积 W 薄膜是多晶相，且两端电极薄膜中均存在 α-W 和 β-W 两种晶相，其中，β-W 相是导致电阻率升高的主要因素。 Besides, it is found that the crystalline phases of the ALD thin films as bothtop and bottom electrodes are polycrystalline phase composing of α-W and β-W.And the β-W phaseusually results in high resistivity of the films.
44282 最后，对电容器进行了 C-V 和 I-V 测试， Finally, the C-V and I-V characteristics of the capacitorswere measured.
44283 结果表明，对于 3D 电容器，所制备的 W 薄膜电极具有良好的电学性能。 The results indicate that the prepared W thin films for 3D capacitors have good electricalproperties.
44284 研究了 Nd∶ BiFeO3 ( NBFO) /Nb∶ SrTiO3 ( NSTO) 异质结构的电阻变换效应并讨论其铁电阻变换机理。 The resistive switching effect of Nd∶ BiFeO3 (NBFO) /Nb∶ SrTiO3 (NSTO) heterostructure and the mechanism was researched and the mechanism of ferroelectric resistive switching wasdiscussed.
44285 利用脉冲激光沉积 ( PLD) 法在 NSTO 单晶衬底上生长了 NBFO 薄膜，并构筑了Pt /NBFO /NSTO 异质结构。 The NBFO thin films were epitaxially grown on the NSTO single-crystal substrate by pulsed laser deposition (PLD) method to form Pt /NBFO /NSTO heterostructure.