ID 原文 译文
44266 该肖特基接触电极可有效抬升其电极下的能带、增大源区价带和沟道区导带之间的能带重叠区、减小隧穿距离， The Schottky contact electrode withhigher work function effectively lifts the energy band beneath the Schottky contact electrode, increases theenergy band overlap area between the valence band of the source side and the conduction band of thechannel side and decreases the tunneling width.
44267 提高了开态电流和开关电流比，获得了更小的亚阈值摆幅。 Thus, the on-state current and on /off current ratio are improved, and the lower subthreshold swing is obtained.
44268 运用 Silvaco TCAD 软件完成器件仿真，并优化了该肖特基接触电极与栅电极的间距、栅金属功函数等参数。 The novel device structure and simulation resultswere obtained by using Silvaco TCAD software and the parameters were optimized, such as the spacingbetween the Schottky contact electrode and the gate electrode, and the metal work functions of gate.
44269 仿真结果表明:在室温下，该隧穿场效应晶体管的开态电流为 3. 22 × 10 － 6 A /μm，关态电流为5.71 × 10 － 17 A /μm，开关电流比可达5.64 × 1010，亚阈值摆幅为34.22 mV / dec。 Thesimulation results show that the on-state current of the TFET is 3.22 × 10 － 6 A /μm, the off-state currentis 5.71 × 10 － 17 A /μm, on /off current ratio is 5.64 × 1010 and the subthreshold swing is 34.22 mV / decat room temperature.
44270 研发了一种 FA /O 阻挡层抛光液，主要成分包含硅溶胶、螯合剂和 FA /O 非离子型表面活性剂。 A kind of FA /O barrier slurry was researched and developed.The main components included silica sol, chelating agent and FA /O non-ionic surfactant.
44271 使用该阻挡层抛光液进行了铜、阻挡层 ( Ta) 和介质层 ( TEOS-SiO2 ) 的去除速率选择性实验， The removal rates of copper, barrierlayer (Ta) and dielectric layer (TEOS-SiO2) were selectively tested using the FA /O barrier slurry.
44272 实验表明，FA /O 阻挡层抛光液对 Cu 的去除速率较低，对 Ta 和 SiO2 的去除速率较高，分别为 4. 7，23. 5 和 45 nm /min。 The experiments show that the removal rate of Cu is lower, and the removal rates of Ta and SiO2 are higher.The removal rates for Cu, barrier layer and dielectric layer are 4.7, 23.5 and 45 nm /min, respectively.
44273 该 FA /O 阻挡层抛光液可有效抑制铜的去除速率，提高介质层的去除速率， The FA /O barrier slurry could effectively inhibit the removal rate of Cu, and improve the removal rate of the dielectric layer.
44274 可有效修正精抛过程中产生的正碟形坑和蚀坑。 And the dishing and erosion could be eflectively corrected during the copper clearing stage.
44275 300 mm 铜布线片抛光实验结果表明，其碟形坑深度不大于 40 nm ，蚀坑深度不大于 30 nm。 Finally, the FA /O barrier slurry was tested on 300 mm Cu pattern wafer.The results show that after the CMP process by the FA /O barrier slurry, the depth of the dishing is below 40 nm and the depth ofthe erosion is below 30 nm.