ID 原文 译文
44256 搭建了具备施加高温栅偏应力和测量器件静态特性以及两者快速切换的实验平台。 in order to evaluate the high-temperature gate bias characteristics of silicon carbide (SiC)metal oxide semiconductor filed effect transistors (MOSFETs) under different electrothermal stress andtime cycles.Moreover, these two functions can be rapidly switched each other.
44257 从施加高温栅偏应力、去除应力后室温下短期恢复和长期恢复 3 个不同阶段研究了 SiC MOSFET 静态参数对高温栅偏应力的敏感度，以及不同时间周期范围内阈值电压的恢复能力。 The sensitivity of SiCMOSFET＇s static parameters to high-temperature gate bias and the threshold voltage recovery ability in different time periods were studied from three different phases, such as high temperature gate bias, shortterm recovery and long-term recovery at room temperature after stress removal.
44258 实验结果表明，高温栅极正偏压和高温环境存储都会导致器件阈值电压的正向漂移， The experimental resultsshow that high-temperature gate positive bias and high-temperature environment storage will lead to thepositive shift of the threshold voltage.
44259 室温施加栅极正偏压，器件阈值电压几乎不发生漂移。 When the gate is positively biased at room temperature, there is noobvious drift of the device＇s threshold voltage.
44260 此外，长时间高温栅偏后，室温条件下器件的导通电阻和泄漏电流都表现出十分优异的稳定性。 In addition, the on-resistance and the leakage current ofthe device exhibit excellent stability at room temperature after a long period of high-temperature gate biasexperiment.
44261 然而，高温栅偏后器件阈值电压的漂移程度还取决于恢复时间， However, the drift of the device＇s threshold voltage after the high-temperature gate bias alsodepends on the recovery time.
44262 恢复时间越长，阈值电压漂移程度越小。 The longer the recovery time, the smaller the threshold voltage drift.
44263 研究了一种新型源电极的双物质双栅隧穿场效应晶体管 ( NSE-DMDG-TFET) ， A novel source electrode dual-material double-gate tunneling field-effect transistor (NSEDMDG-TFET) was studied.
44264 该器件结合了新型源电极和双物质栅的优点， The proposed device combined advantages of the novel source electrode andthe dual-material gate.
44265 其中新型源电极由传统的欧姆接触电极和高功函数浮空肖特基接触电极构成， The novel source electrode was composed of the conventional ohmic contact electrode and the high work function floating Schottky contact electrode.