ID 原文 译文
44246 测试结果表明,在栅偏压为 0 V 时,器件的开态导通电阻仅为 65 Ω·mm,漏源饱和电流密度达到 173 mA /mm, The tested results show that when the gatebias voltage is 0 V, the on-resistance is only 65 Ω·mm, and the drain-source saturation current densityis 173 mA /mm.
44247 器件的三端关态击穿电压达到 120 V。 The three-terminal off-state breakdown voltage of the fabricated device reaches 120 V.
44248 利用电化学阳极氧化方法制备了高度有序的 TiO2 纳米管阵列,采用旋涂方法在纳米管表面制作一层聚 ( 3,4-亚乙二氧基噻吩) 聚( 苯乙烯磺酸) ( PEDOT∶ PSS) 薄膜构建PEDOT∶ A highly ordered TiO2 nanotube array was prepared by electrochemical anodic oxidation.A layer of poly (3, 4-ethylenedioxy thiophene) poly (styrenesulfonate) (PEDOT∶ PSS) film wasprepared on the surface of the nanotube by spin coating to form a PEDOT∶
44249 PSS/TiO2纳米管肖特基结并研究了其紫外探测性能。 PSS /TiO2 nanotube Schottkyjunction and its UV detection performance was investigated.
44250 通过扫描电子显微镜 ( SEM) TiO2 纳米管和 PEDOT∶ PSS 进行表面微观形貌表征。 The surface micromorphologis of TiO2 nanotubes and PEDOT∶ PSS were characterized by the scanning electron microscopy (SEM) .
44251 通过测试不同光照强度、不同偏压下的电压 电流和电流 -时间曲线研究 PEDOT∶ PSS /TiO2 纳米管肖特基结在紫外光 ( UV) 下的光电探测性能。 The photo detection performances of PEDOT∶ PSS /TiO2 nanotubes Schottky junction under ultraviolet light (UV)were studied by testing the voltage-current and current-time curves under different light intensities and different bias voltages.
44252 由于 TiO2纳米管较高的比表面积和 PEDOT∶ PSS 较高的透射率,PEDOT∶ PSS /TiO2 纳米管肖特基结具有优良的紫外光电探测性能。 Due to the higher specific surface area of TiO2 nanotubes and the higher transmittance of PEDOT∶ PSS, the PEDOT∶ PSS /TiO2 nanotube Schottky junction exhibited excellent UV photodetection performances.
44253 实验发现,在 1 V 偏压和光照强度为 2. 14 mW/cm2 375 nm 紫外光照射下,PEDOT∶ PSS /TiO2 纳米管肖特基结的光电流可达 973. 5 μA,响应度为 2. 23 A/W,外量子效率高达 736. 5%。 The experimental results show that the photocurrent, responsivity and extemaquantum efficiency of the PEDOT∶ PSS /TiO2 nanotubes Schottky junction are 973.5 μA, 2.23 A /W and 736.5% respectively at 1 V bias voltage and 375 nm UV light with a light intensity of 2.14 mW /cm2.
44254 实验结果表明 PEDOT∶ PSS /TiO2 纳米管肖特基结的紫外探测结构性能良好。 The results indicate that the UV detection structure of the PEDOT∶ PSS /TiO2 nanotube Schottky junction has a good performance .
44255 为了评估不同电热应力和时间周期下碳化硅 ( SiC) 金属氧化物半导体场效应晶体管( MOSFET) 的高温栅偏特性, An experimental platform with the capabilities of applying high-temperature gate biasstress, the measurement of static characteristics for the device and the fast switching between the deviceswas built,