| ID | 原文 | 译文 |
| 44236 | 将 ISFET pH 传感器分别在 15，45和 75 ℃下对不同 pH 值的微升标准溶液进行了测量。 | The pH values of different standard solutions were measured by ISFET pH sensor at 15, 45 and75 ℃, respectively. |
| 44237 | 实验结果表明，随着温度升高，pH 传感器的敏感度增大，其变化趋势与理论相符。 | The experimental results show that the sensitivity of the pH sensor increases with theincrease of temperature, which is consistent with the theory. |
| 44238 | 当温度为 75 ℃ 时，器件灵敏度达到 50. 9 mV / pH。 | The sensitivity is 50.9 mV / pH at the temperature of 75 ℃ . |
| 44239 | 同时，实验中还观察到传感器的阈值电压随温度升高产生了正向漂移。 | At the same time, the threshold voltage of the sensor shows a positive drift with the increase of temperature. |
| 44240 | 通过传输线模型测试以及对肖特基圆环进行电容 － 电压特性测试，发现阈值电压变化的原因在于载流子迁移率随温度升高而明显降低。 | By testing the transmission line model and the capacitance-voltage characteristicsof Schottky ring, the results show that the change of threshold voltage is due to the decreases of carriermo-bility with the increase of temperature. |
| 44241 | 研制了一款具有高漏源饱和电流密度的 Ga2O3 MOSFET 器件。 | The Ga2O3 MOSFETs with high drain-source saturation current density were developedand fabricated. |
| 44242 | 采用金属有机化学气相沉积 ( MOCVD) 方法在 Fe 掺杂半绝缘 ( 010) Ga2O3 同质衬底上外延得到 n 型 β-Ga2O3 薄膜材料， | n-typed β-Ga2O3 film material was homoepitaxially grown on a Fe-doped semi-insulating(010) Ga2O3 substrate by metal organic chemical vapor deposition (MOCVD) . |
| 44243 | n 型 Ga2O3 沟道层 Si 掺杂浓度为 2. 0 × 1018 cm － 3，n 型沟道厚度为 80 nm。 | The Si doping concentration of n-typed Ga2O3 channel layer is 2.0 × 1018 cm － 3, and the thickness of channel layer is 80 nm. |
| 44244 | 采用 Si 离子注入工艺，器件欧姆特性得到大幅改善，欧姆接触电阻降至 1. 0 Ω·mm。 | Si-ion implantation technology was adopted to improve the ohmic characteristics, and the ohmic contactresistance reduced to 1.0 Ω·mm. |
| 44245 | 采用原子层沉积 ( ALD)厚度为 25 nm 的 HfO2 作为器件的栅下绝缘介质层。 | The HfO2 films with the thickness of 25 nm grown by atomic layerdeposition (ALD) was used as gate dielectric of the device.0 Ω·mm. |