ID 原文 译文
44226 采用 0. 18 μm CMOS 工艺完成了该 DAC的加工和性能参数测试。 The DAC was implemented By using 0.18 μm CMOS process and the performance parameters were tested.
44227 在 1 GHz 采样率和 100 MHz 输入信号频率条件下，该 DAC 的无杂散动态范围约为 67 dB，三阶互调失真约为 76 dB，整体性能优于目前同类研究成果。 The test results show that the DAC has a spurious free dynamic range about 67 dB and third-order inter-modulation distortion about 76 dB under the conditions of 1 GHz sample frequency and 100 MHz inputsignal frequency.The overall performance is better than other research results.
44228 设计并实现了一款具备 200 mA 输出电流能力的开关电容电压反转器，可用于有源相控阵雷达 T /Ｒ 组件中正负电源转换。 A switched-capacitor voltage converter with output current of 200 mA was designed and implemented, which could convert the positive to the negative voltage in the application of T /Ｒ modulepower.
44229 采用无感式设计简化了开关电源的复杂外围，有效减小了体积。 The switched-capacitor voltage converter with non-inductance simplified the complex periphery ofthe switched-mode power supply and effectively reduced the sizes of T /Ｒ modules.
44230 对开关电容电压反转器的系统结构、电路和版图技术进行研究，进行了结构设计及振荡器、互补时钟、开关驱动等电路设计， The system structure, circuit and layout technology of switched-capacitor voltage converter were studied.The structure designwas carried out, and circuits of the oscillator, complementary clocks and switch driving were designed.
44231 并采用 0. 6 μm Trench SOI CMOS 工艺对该产品进行设计和生产制造。 The switched-capacitor converter was designed and manufactured by 0.6 μm Trench SOI CMOS process.
44232 实现了最高输入电压 + 8 V 转输出电压 － 8 V，最高带载 200 mA 的开关电容电压反转器产品， The maximum input voltage of + 8 V to output voltage of － 8 V and the maximum load of 200 mAswitched-capacitor voltage converter are realized.
44233 外围仅采用储能电容即可实现正负电源转换，满足了 T /Ｒ 组件技术指标和小型化要求。 It needs two capacitors to storage and convert energy, which makes the positive voltage to negative voltage.It can meet the requirement of technical indicatorsand miniaturization in T /Ｒ module used in radars.
44234 制备了集成式全固态 AlGaN /GaN 异质结离子敏感场效应晶体管 ( ISFET) 结构 pH 传感器，并研究了其温度特性。 All-solid-state integrated AlGaN /GaN heterostructure ion-sensitive field effect transistor(ISFET) pH sensors were fabricated and the temperature characteristics of the sensor were investigated.
44235 将惰性金属薄膜作为固态参比电极集成到 pH 传感器主体上，取代传统的外置玻璃参比电极，实现了对微升溶液 pH 值的测量。 The inert metal film was integrated into the pH sensor as a solid reference electrode to replace the traditional external glass reference electrode.The measurement of the pH value of microliter solution wasachieved.