ID 原文 译文
44206 使用粒径测试仪测试加入不同体积分数 JFC 的抛光液的平均粒径， The mean particle size of the slurry containing different volume fractions of JFC surfactant were tested by the particle size tester.
44207 使用光学显微镜、扫描电子显微镜 ( SEM) 对抛光后的表面缺陷进行分析和表征，并统计阻挡层抛光后图形片上划伤缺陷数。 Surface defects of the polished pattern wafer were analyzed and characterized with the optical microscope and scanning electron microscope (SEM) , and thenumber of scratches on the pattern wafer was counted.
44208 实验结果显示，JFC 有效降低了抛光液的平均粒径和大颗粒数; The experimental results show that the addition of JFC surfactant effectively reduces the mean particle size and large particle counts of the slurry.
44209 当JFC 型活性剂体积分数为 4. 5%时，图形片表面划伤缺陷最少; The results of the barrier layer CMP show that when the volume fraction of the JFC surfactant is 4.5%, the scratcheson the surface of the pattern wafer are least.
44210 安装 0. 7 μm 过滤器的供液系统效果最好，与不安装相比，划伤缺陷密度降低了 90%。 The test results show that the liquid supply system with the0.7 μm filter is the best, and the scratch defect density is reduced by 90% compared to the systemwithout filter.
44211 JFC 和过滤器都能有效地降低 CMP 过程中的划伤缺陷， The JFC surfactant and filter can effectively reduce the scratch defects in the CMP process.
44212 将两者结合可以更好的降低划伤缺陷。 Combine the JFC and filter to better reduce the scratch defects.
44213 针对化学机械抛光 ( CMP) 过程中的铜残留缺陷问题，研究了一种在 FA/O 阻挡层抛光液中添加助溶剂和 H2O2 的新型阻挡层抛光液。 A new kind of FA/O barrier slurry containing the cosolvent and H2O2 was developed tosolve the problem of residual copper defects in chemical mechanical polishing (CMP) .
44214 分别考察助溶剂和 H2O2对 SiO2 介质和铜去除速率的影响以及对碟形坑和蚀坑的修正能力， Both the effects ofthe cosolvent and H2O2 on the removal rate of the SiO2 and copper, and the ability to correct the dishingand erosion were investigated, respectively.
44215 通过扫描电子显微镜 ( SEM) 观察铜残留缺陷的情况。 The residual copper defects were investigated by the scanningelectron microscopy (SEM) .