| ID | 原文 | 译文 |
| 44146 | 由于 LPCVD-Si3N4 具有良好的介电特性，常用作 AlGaN/GaN 高电子迁移率场效应晶体管 ( HEMT) 的栅介质， | Due to the excellent dielectric property, LPCVD-Si3N4 material is commonly used as gatedielectric of AlGaN/GaN high electron mobility transistor (HEMT) . |
| 44147 | 然而在高温生长中，易造成 GaN 界面 Ga 和 N 的扩散。 | However, it is easy to cause the diffusion of Ga and N on GaN interface in high-temperature growth ambient. |
| 44148 | 针对此问题，提出了一种采用 SiON/Si3N4 复合绝缘材料作为 HEMT 器件栅介质的方法， | A method of using SiON/Si3N4 composite insulating material as gate dielectric of HEMT devices was proposed to solve these problems. |
| 44149 | 制备了高质量的AlGaN/GaN 金属－绝缘层－半导体高电子迁移率晶体管 ( MISHEMT) 器件， | The high quality AlGaN/GaN metal-insulator-semiconductor HEMT (MISHEMT) was fabricated. |
| 44150 | 并进行了直流测试。 | And the DC test was carried out. |
| 44151 | 测试结 果 表 明，在 栅 压 为 18 V 时，器件的阈值回滞仅为 150 mV，其特征导通电阻为1.74 mΩ·cm2 ( Vgs = 2 V) ，其击穿电压达到 805 V ( Ids = 100 μA/mm) 。 | The test results show that when the gate voltage is up to 18 V, the threshold hysteresis of the device is 150 mV, the specific on-resistance is 1.74 mΩ·cm2 (Vgs = 2 V) and the highbreakdown voltage reaches 805 V (Ids = 100 μA/mm) . |
| 44152 | 多频率 C-V 测试显示，界面态密度可低至 2. 9×1013 eV－1·cm－2。 | The multi-frequency C-V test exhibits the interface-state density is as low as 2.9×1013 eV－1·cm－2. |
| 44153 | 因此，这种采用 SiON/Si3N4 复合绝缘材料作为栅介质的方法，在改善器件的阈值回滞、击穿电压和界面态密度等方面效果显著。 | Thus, it is significantly effective to improve thethreshold hysteresis, increase the breakdown voltage, and reduce the interface state density by usingSiON/Si3N4 composite insulating material as gate dielectric. |
| 44154 | 设计了一款半桥结构的焊接式绝缘栅双极型晶体管 ( IGBT) 模块。 | A welded insulated gate bipolar transistor (IGBT) module with half bridge structure wasdesigned. |
| 44155 | 模块内部电路整体布局设计为 IGBT 的正负母线端子在直接覆铜 ( DBC) 板的一端，DBC 板的另一端为 IGBT 的交流输出端，两块 DBC 板通过键合线连接在一起，形成半桥结构。 | The overall layout design of the module internal circuit was that the positive and negative busterminal of the IGBT was placed at one end of the direct bonding copper (DBC) , and the other end ofthe DBC was the AC output, the two DBCs were connected by bonding wires to form a half bridge structure. |