ID 原文 译文
44136 结果表明，随着 FA/O Ⅱ体积分数的增加，铜的去除速率 ( vCu )逐渐变大，当其体积分数增至 3. 5%后，vCu呈略微下降态; The results showthat with the increase of FA/O Ⅱ volume fraction, the removal rate of copper (vCu) is gradually increased until the FA/O Ⅱ volume fraction reaches to 3.5%, then vCu decreases slightly.
44137 加入 H2O2 可使 vCu先迅速地增加，在其体积分数增至 1. 5%后 vCu开始下降。 Similarly, vCuincreases rapidly with the addition of H2O2 and then decreases after the volume fraction of H2O2 reachesto 1.5%.
44138 FA/OⅡ型螯合剂、H2O2 在低体积分数时对铜均有强去除作用; Chelating agent FA/O Ⅱ and H2O2 have strong effects on copper removal at a low volume fraction;
44139 BIT 对铜的抑制作用较大，其体积分数的增加使得 vCu不断减小。 BIT has a visible inhibitory effect on copper, vCu constantly declines with the increase of BIT volumefraction.
44140 三者的协同作用实现了对 HCu的有效控制。 The effectively control of HCu is achieved by the synergy of the three components of slurry.
44141 研究了 Pt /Nb ∶ SrTiO3 /In 结构器件的异常双极性电阻变换特性，并对其物理机理进行了讨论。 The abnormal bipolar resistive switching behavior of the device with Pt /Nb ∶ SrTiO3 /Instructure were studied and the physical mechanism was discussed.
44142 用直流磁控溅射的方法在不同组分 Nb 掺杂 SrTiO3( NSTO) ( 001) 单晶衬底上制备了 Pt和 In 电极，构建了 Pt /NSTO/In 异质结。 Pt and In electrodes were sputtered onto a serials of Nb ∶ SrTiO3(NSTO) (001) single crystal substrates with different Nb contents by directcurrent magnetron sputtering to build the Pt /NSTO/In heterojunction.
44143 该异质结的 I-V 特性测试结果表明，该异质结具有不同寻常的双极性阻变特性。 I-V characteristics of the heterojunction show that the heterojunction has an abnormal bipolar resistive switching feature.
44144 随着 Nb 在 SrTiO3 中掺杂浓度的改变，决定样品在正电压扫描过程中由高电阻状态 ( HＲS) 向低电阻状态 ( LＲS) 或由 LＲS 向 HＲS 转换的阈值电压也呈现出规律性变化。 And with thechanges of the Nb doping concentration in SrTiO3, the threshold voltage that decide sample switchingfrom high resistance state (HＲS) to low resistance state (LＲS) or from LＲS to HＲS during positivevoltage scanning show regular changes.
44145 对其阻变特性的物理机制分析表明，Pt /NSTO 界面肖特基势垒和 Pt /NSTO、NSTO/In 界面处的氧空位引入的缺陷能级对电子的束缚和释放与该器件不同寻常的双极性电阻变换特性密切相关。 Analysis of the physical mechanism of its resistive switching effectshows that the Schottky barrier at the interface of Pt /NSTO and trapping and release to carriers of the defect levels introduced by oxygen vacancies at the interfaces of Pt /NSTO and NSTO/In are closely relatedto the abnormal bipolar resistive switching effect of the device.