ID 原文 译文
44126 测试结果表明，在 － 40 ～ 150 ℃ 内，基准电压的温度系数为 3. 9 ×10－6 /℃ ; The experimental results show that the temperature coefficient of the reference voltage is 3.9×10－6 /℃ in the temperature range of －40－150 ℃,
44127 低频时电源抑制比为－76. 8 dB。 and the power supply rejection ratio is －76.8 dB atlow frequency.
44128 随着器件特征尺寸缩小，发生在敏感节点之间的电荷共享使加固静态随机存储器( SＲAM) 单元容易发生单粒子翻转 ( SEU) 。 With the reduction of the device feature size, charge sharing between sensitive node pairscould easily cause the single event upset (SEU) of hardened static random access memory (SＲAM) cell.
44129 通过对 ＲOCK，WHIT，Quatrol 及 JUNG 等 SＲAM 单元的 SEU 加固机理分析，提出一种新型 SEU 加固 SＲAM 单元，并从面积、延时、功耗和 SEU 恢复时间等方面对传统加固单元和新结构进行了对比与分析。 The hardening fundamentals of SEU for SＲAM cell such as ＲOCK, WHIT, Quatrol and JUNG were analyzed, and a novel SEU hardened SＲAM cell was proposed.The area, delay, power consumption andSEU recovery time of the traditional hardened SＲAM cells and the new structure were compared and analyzed.
44130 结果表明新型 SEU 加固 SＲAM 单元具有更高的临界电荷和更低的 SEU 恢复时间。 The results show that the new SEU hardened SＲAM cell has more critical charges and less SEU recovery time than previous hardened cells.
44131 由于其只有两个翻转敏感节点对，新结构抗 SEU的能力优于 ＲOCK，Quatrol 和 JUNG 结构。 Because there are only two sensitive node pairs in the newstructure, it has better SEU tolerant capability than ＲOCK, Quatrol and JUNG structure.
44132 新提出的结构以较小的面积和性能代价，显著提高SＲAM 单元抗 SEU 能力，可有效降低 SＲAM 型存储器在深亚微米工艺节点的软错误率。 With little areapenalty and performance degradation, the SEU tolerant capability of SＲAM cell is greatly improved, which can dramatically reduce the soft error rate of SＲAM in deep sub-micron process.
44133 GLSI 铜布线阻挡层化学机械抛光 ( CMP) 中铜沟槽剩余厚度 ( HCu ) 关系着集成电路的电性能，是集成电路制造工艺重要评定参数之一。 The residual copper thickness in the trench (HCu) of GLSI copper wiring barrier layer after chemical mechanical polishing (CMP) process is related to the electrical performances of theintegrated circuit, and which is one of the most important evaluation parameters of the integrated circuitmanufacturing process.
44134 使用不同配比的新型弱碱性抛光液对多层铜布线的阻挡层进行 CMP， A new weakly alkaline slurry with different proportions was used in the CMPprocess of the multilayer copper wire barrier layer.
44135 研究了抛光液中不同体积分数的螯合剂 FA/OⅡ、氧化剂 H2O2 和抑菌剂 BIT 条件下对 HCu的影响。 The effects of different volume fractions of chelatingagent FA/O Ⅱ, oxidant H2O2 and bacteriostatic agent BIT on the HCu were investigated.