ID 原文 译文
44116 为了提高AlGaN /GaN HEMT器件的耐电压能力和沟道电场均匀性，先建立漏极离子轻掺杂 ( LDD) 结构的AlGaN /GaN HEMT 模型， In order to improve the withstandvoltage capability and channel electric field uniformity of AlGaN /GaN HEMT devices, a AlGaN /GaNHEMT model with low-density drain (LDD) was established.
44117 在势垒层中引入带负电荷的氟离子会降低沟道内的正极化电荷，形成类似于 “栅场板”结构，以增加导通电阻为代价降低栅电极附近沟道内电场峰值。 The introduction of negative chargedfluoride ions into the barrier layer could reduce the positive polarization charges in the channel, the effect of the negative charges was similar to the gate field plate, which could reduce the peak value of the electric field near the gate electrode at the cost of increasing the on-resistance.
44118 之后在漏极附近势垒层进行氢离子注入，来补偿 LDD 结构输出特性的损失，并进一步均匀沟道电场分布， Then the hydrogen ions wereimplanted to the channel next to the drain to compensate for the loss of the LDD-HEMT structure output characteristics and further uniform electric field distribution in the channel.
44119 提高 AlGaN /GaN HEMT 器件的耐压特性。 The withstand voltage characteristics of AlGaN /GaN HEMT devices were improved.
44120 最终设计的 AlGaN /GaN HEMT 器件导通电阻为0.766 mΩ·cm2，击穿电压为 1 176 V。 Finally, the AlGaN /GaN HEMT with a breakdownvoltage of 1 176 V and a specific on resistance of 0.766 mΩ·cm2 was achieved.
44121 设计了一种带有二阶温度补偿的高精度带隙基准电压源电路。 A high precision bandgap reference voltage source circuit with the second-order temperature compensation was designed.
44122 相比传统带隙基准电路，所设计的电路不仅进行了一阶温度补偿，在高温阶段增加了与一阶温度补偿基准电压的温度系数呈负相关的曲率补偿电流， Compared with the traditional bandgap reference circuit, the designedcircuit was compensated by the first-order temperature compensation, and the curvature compensationcurrent was increased which was negatively correlated with the temperature coefficient of the first-ordertemperature compensation reference voltage at high temperature.
44123 通过电阻将补偿电压叠加到经过一阶补偿的基准电压上， The compensated voltage was superimposed on the first-order compensated reference voltage through a resistor.
44124 以二阶温度补偿的方式改善了基准电压在高温时的温度特性，降低温度系数，最终输出较低温漂的基准电压。 By the second-order temperaturecompensation method, the temperature characteristics of the reference voltage at high temperature wereimproved, the temperature coefficient was reduced, and the reference voltage with lower temperature driftwas finally produced.
44125 基于 0. 5 μm BCD 工艺进行电路设计，利用 Cadence 工具进行仿真验证，最终流片，芯片面积为 0. 9 mm × 0. 9 mm。 The circuit was designed based on the 0.5 μm BCD process, and the Cadence toolwas used for the simulation verification, and finally the chip was fabricated with a area of 0.9 mm ×0.9 mm.