ID 原文 译文
44106 最后基于 Multisim 平台建立了新型IGBT Cauer 热网络模型，实现热效应耦合下结温的实时预测。 Finally, based on the Multisim platform, a new IGBT Cauerthermal network model was set up to realize the real-time prediction of the junction temperature under thetemperature coupling.
44107 仿真结果表明，随着环境温度升高和 IGBT 功耗增大，材料热效应对结温预测影响就越大，此时新 Cauer 模型仿真结果更具有参考价值，可为功率器件寿命评价提供更可靠的数据支持。 The simulation results show that the effect of the thermal efficiency of the materialon the temperature prediction is greater with the increase of the temperature and power consumption of the IGBT, and then the simulation results of the new Cauer model are more valuable and provide more reliable data for the device life evaluati
44108 提出了一种考虑性能退化因素的 IGBT 模块可靠性度量模型， A reliability measurement model of IGBT modules considering the performance degradation was proposed.
44109 该模型以广义应力－强度干涉模型为基础， The model was based on the generalized stress-strength interference model.
44110 同时考虑了应力和强度间的相关性以及使用过程中强度的退化性问题。 The correlation between the stress and strength and the degradation of the strength during operation were considered simultaneously.
44111 分析了 IGBT 模块失效原因和失效类型，通过功率循环加速老化试验获取 IGBT 模块的退化数据，并选用 Gamma 分布来描述 IGBT 模块性能退化参数的退化过程; Firstly, the causes and failure types of IGBT modules were analyzed.Then, the degradation data of the IGBT module were obtained by the power cycling accelerated aging test, and the Gammadistribution was selected to describe the degradation process of the performance degradation parameters ofthe IGBT module.
44112 最后，根据广义应力－强度干涉模型求取某种应力环境下对应的 IGBT 模块可靠度， Finally, the reliability of the IGBT module under certain stress environment was obtained according to the generalized stress-strength interference model.
44113 建立了广义应力与广义强度间的关系，计算得到 IGBT 模块在某种应力环境下的可靠度区间值。 The relationship between the generalized stress and the generalized strength was established, and the reliability interval value of the IGBTmodule under certain stress environment was calculated.
44114 计算结果表明，与现有的可靠性度量模型相比，该方法能够实现 IGBT 模块可靠性度量，可应用于 IGBT 模块的器件选型。 The results show that comparing with the existingreliability measurement models, the proposed method can achieve the reliability measurement of IGBTmodule and is applicable to the device selection of IGBT module.
44115 普通结构 AlGaN /GaN 高电子迁移率晶体管 ( HEMT) 器件受漏极高压影响，器件沟道内的电场线在栅电极附近不断汇聚，最终导致 AlGaN /GaN HEMT 器件提前击穿。 Under the influence by the drain high voltage, an electric field peak will be formed because of the convergence of the electric field lines in the conventional AlGaN /GaN high electron mobility transistor (HEMT) channel, which will break the device in advance.