ID 原文 译文
44096 首先构造埋置结构 OEPCB 的导热模型， Firstly, the heatconduction model of the OEPCB with the buried structure was constructed.
44097 然后采用有限差分方法求解传热方程， Then the finite differencemethod was used to solve the heat transfer equation.
44098 最后利用 FloTHEＲM 软件进行仿真分析与优化。 Finally, the FloTHEＲM software was used for thesimulation analysis and optimization.
44099 结果表明，在使用目前常用材料的情况下，光波导埋置结构 OEPCB 的温度场分布并不均匀，极易导致 PCB 板层的热应力差，进而对结构造成破坏。 The results show that the temperature field distribution of the OEPCB with optical wave guide embedded structure is not uniform using the commonly used materials, which can easily lead to the thermal stress difference of the PCB layers and then damage the structure.
44100 通过优化光波导芯层、外层导热材料的导热率，可有效降低 OEPCB 层间温度场梯度，保证光波导埋置结构植入后结构的热稳定性。 By optimizing the thermal conductivity of the thermal conductive materials of the core and the outer layer, the temperature field gradient between the OEPCB layers were reduced, and the thermal stability of thestructure after implanting the optical waveguide embedded structure was ensured.
44101 仿真结果显示，经优化后，现有温度场最高温度处的温度下降 22. 40%，其他处亦有下降。 The simulation results show that after the optimization, the highest temperature of the existing temperature field drops by 22.40%, and other position also decrease.
44102 功率器件结温预测对于器件的寿命评价具有重要意义，而材料的热效应是影响结温预测结果的关键因素之一。 The junction temperature prediction of power devices is great important for the life evaluation of the device and the thermal effect of materials is one of the key factors affecting the accuracyof prediction results.
44103 基于此，提出了一种考虑热效应的绝缘栅双极型晶体管 ( IGBT) 热网络模型建模方法，可提高 IGBT 结温预测的准确性。 Based on this, a modeling method of insulated gate bipolar transistor (IGBT) thermal network considering thermal effect was proposed to improve the accuracy of junction temperature prediction.
44104 采用经典 Foster 与 Cauer 热网络模型转换方法，获取 IGBT 各层结构热阻和热容， By using the classical Foster and Cauer thermal network model conversion method, the thermal resistance and thermal capacity of IGBT each structure were obtained.
44105 建立芯片 Si 热阻－温度的函数模型，对比模型计算值与实验结果，验证了热阻－温度函数建模方法的合理性与准确性。 The thermal resistance-temperaturefunction model of silicon chip was established by linear fitting, and the rationality and accuracy of thethermal resistance-temperature function modeling method were verified by comparing the calculated valuesof the model with the experimental results.