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44076 测试结果表明，SiC MOSFET 的导通电阻变化量相对小，且应力停止后导通电阻可以恢复到初始状态，这说明其界面态陷阱密度比 GaNHEMT 更低， The test results showthat the change of on-resistance of SiC MOSFET is less than that of GaN HEMT and the on-resistance canrecover to the initial state after stress stopped, which means that the trap density of interface state of SiCMOSFET is lower than that of GaN HEMT.
44077 因此实际应用中无需考虑导通电阻的稳定性; It is not necessary for SiC MOSFET to consider the stability ofon-resistance in practical applications.
44078 而 GaN HEMT 的动态电阻变化较大，这极大地增加了导通损耗，影响系统的可靠性， However, the dynamic resistance of GaN HEMT varies greatly, which greatly increases the conduction loss and affects the reliability of the whole system.
44079 因此在实际应用中需要考虑导通电阻变化对导通性能的影响。 Therefore, it isnecessary to consider the effect of on-resistance change on conduction performance in practical applications.
44080 设计了一种用于低功耗 2. 4 GHz 无线物联网 ( IOT) 芯片的电源管理系统，用于极低功耗物联网，如智能家居、工业控制、农业自动化等领域。 A power management system for low-power 2.4 GHz wireless internet of things (IOT)IC was designed, which was used in very low power IOT, such as smart home, industry control and agriculture automation.
44081 该芯片在高功率和低功率两种模式下分别采用了不同的低压差线性稳压器 ( LDO) 电路设计， The IC adopted different low dropout regulator (LDO) circuits structures for highpower mode and low-power mode, respectively.
44082 通过特殊时序保证了高低功率模式切换时输出电压稳定。 A dedicated timing control logic was used to stabilize theoutput voltage when switching between high-power mode and low-power mode.
44083 仿真结果显示，采用源随器结构的低功耗 LDO 的静态电流仅为 1 μA，单比较器振荡电路的电流为 1. 2 μA，带隙基准电路的电流为 3 μA，上电复位电路电流为 2 μA。 The simulation results showthat the quiescent current consumption of the low-power LDO with source follower structure is only 1 μA and the current consumptions for the single-comparator oscillator, bandgap reference and power on resetcircuits are 1.2, 3 and 2 μA, respectively.
44084 测试结果显示芯片在休眠状态下的平均电流为 7. 2 μA，与电路模块仿真结果相一致。 The test results show that the average current consumption ofthe chip in sleeping mode is 7.2 μA, which is in good agreement with the simulation results of the circuitmodule.
44085 该电源管理系统采用 SMIC 0. 18 μm CMOS 工艺实现，面积仅为 227 μm×123 μm。 The power management unit was fabricated using SMIC 0.18 μm process, which occupied227 μm×123 μm only.