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44066 但是由于压接型 IGBT 器件双面散热的特性使芯片内部温度分布更均匀，也使结温测量的误差相对较小。 However, due to the double-sided cooling characteristic of PP IGBTs, the internal temperature distribution of the chip is more uniform and this leads to a relatively smaller error of the junction temperature measurement
44067 采用 GaAs pin 二极管和低噪声 GaAs 赝配高电子迁移率晶体管 ( PHEMT) 集成的一片式限幅低噪声放大器 ( LNA) 工艺，设计并制备了一款 Ka 波段 GaAs 微波单片集成电路( MMIC) 限幅 LNA。 A Ka-band GaAs microwave monolithic integrated circuit (MMIC) limiter low noise amplifier (LNA) was designed and fabricated by a technology that GaAs pin diode and GaAs PHEMT LNAwere integrated together.
44068 为了在 Ka 波段实现大功率和低噪声的目标，采用限幅器和 LNA 一体化设计的思路，优化了限幅器的电路拓扑和 pin 二极管的结构。 To achieve the higher power and lower noise at Ka-band, the limiter topologicalstructure and the pin diode structure were optimized by using the idea of integrated design of the limiterand the LNA.
44069 该 LNA 采用三级级联的电流复用拓扑结构。 A three-stage cascaded current reuse topology structure was used in the proposed LNA.
44070 在片测试结果表明，限幅 LNA 在 32～38 GHz 频率范围内，噪声系数小于 3. 1 dB，线性增益大于 18 dB，芯片静态工作电流为 20 mA; Onwafer measured results show that the fabricated limiter LNA working frequency bandwidth is 32－38 GHz , the noise figure is below 3.1 dB, the small signal gain is higher than 18 dB, and the quiescent workingcurrent is 20 mA.
44071 在 70 ℃ 恒温条件下，能够承受脉冲功率为 2 W( 脉冲宽度 4 ms，占空比 30%) ; The limiter LNA could withstand 2 W pulse power at the normal temperature of 70 ℃, with a pulse width of 4 ms and duty cycle of 30%.
44072 芯片尺寸为 3. 3 mm×2. 0 mm×0. 07 mm。 The size of the chip is 3.3 mm×2.0 mm×0.07 mm.
44073 碳化硅金属氧化物半导体场效应管 ( SiC MOSFET) 和氮化镓高电子迁移率晶体管( GaN HEMT) 这两种器件内部存在容易捕获电子的 “陷阱”，会影响导电沟道的性能，进而影响器件的导通电阻。 Because of electron“traps”in the two devices, silicon carbide metal oxide semiconductorfield effect transistor (SiC MOSFET) and gallium nitride high electron mobility transistor (GaN HEMT) , the performance of the conducting channel will be affected, and then the on-resistance of the device willbe affected.
44074 对 SiC MOSFET 和 GaN HEMT 各选取了一款典型的商用器件， The typical commercial SiC MOSFET and GaN HEMT were selected for investigation.
44075 分别对 SiCMOSFET 和 GaN HEMT 的导通电阻可靠性进行了测试。 The reliabilities of on-resistance of SiC MOSFET and GaN HEMT were tested respectively.