ID 原文 译文
44056 实验结果表明，采用树脂铜盘和树脂锡盘将机械研磨时间缩短至 1. 5 h，加工后的晶片表面最大划痕深度约为 2. 743 nm，表面粗糙度为 0. 924 nm。 The experimental results show that the lapping time is shortened to 1.5 h by using the resin copper plateand tin plate.The maximum depth of the scratches on the surface of the wafer is about 2.743 nm and thesurface roughness is 0.924 nm.
44057 在 GaN CMP 单因素实验中，分析了工艺参数 ( 如 pH 值、压力、转速) 对 GaN 单晶片 Ga 面抛光速率的影响。 During the GaN CMP single factor experiment, the influences of processparameters (such as pH value, pressure and rotating speed) on the polishing rate of Ga surface of GaNwafer were analyzed.
44058 实验结果表明，Ga 面在酸性条件下的抛光速率较高，Ga 面抛光速率随着压力和转速的增大而增加。 The results indicate that the polishing rate of Ga surface is higher in the acid environment and it increases with the increase of pressure and rotating speed.
44059 确定了 GaN 单晶片表面加工的最佳工艺参数， The optimum processing parameters of GaN wafers were determined.
44060 当抛光液 pH 值为 3，抛光压力为 6×104 Pa，抛光盘转速为 100 r/min时，Ga 面抛光速率达到 240 nm /h，表面粗糙度可达到 0. 071 9 nm。 The polishing rate of Ga surface is 240 nm /h and the surfaceroughness is 0.071 9 nm, when the pH value of the polishing solution is 3, the polishing pressure is 6×104 Pa and the polishing plate rotation speed is 100 r/min, respectively.
44061 高压大功率绝缘栅双极型晶体管 ( IGBT) 器件的不同封装形式 ( 压接型 IGBT 器件和焊接式 IGBT 模块) 使其热学特性尤其是散热路径存在很大差异， The thermal characteristics between press pack insulated gate bipolar transistors (PP IGBTs) and IGBT modules are different, especially the thermal dissipation path, due to their differentpackage types.
44062 最终可能会影响结温测量方法的适用性和准确性。 This distinction may affect the applicability and accuracy of the existed method of junction temperature measurement.
44063 基于有限元法建立了可表征压接型封装和焊接式封装的等效热学仿真模型， Based on the finite element method, an equivalent thermal simulation modelwas established, which was used to characterize the two package types (PP IGBTs and IGBT modules) .
44064 详细研究了小电流下饱和压降结温测量法的物理过程，对比分析了两种封装形式结温测量的精确度。 The physical process of junction temperature measurement using saturation voltage drop at small constant current was studied in detail, and the accuracies of junction temperature measurement methods betweenthe PP IGBTs and the IGBT modules were compared.
44065 仿真结果表明，小电流下饱和压降结温测量法存在固有测量误差的问题，在高压大功率IGBT 模块中尤为突出， The simulation results show that the junction temperature measurement method using saturation voltage drop at small constant current has the inherentmeasurement error, especially for high-voltage and high-power IGBT modules.