ID 原文 译文
44036 在选取的金刚石、SiC、Al2O3和 SiO2 等 4 种磨料中，使用金刚石磨料的 InP 去除速率最高，使用 SiC 磨料的 InP 抛光后的表面质量最好。 The diamond abrasive can obtain a highest removalrate of InP, but silicon carbide (SiC) abrasive can gain the best polishing surface quality among the fourtypes of abrasive (diamond, SiC, Al2O3 and SiO2) .
44037 随着 SiC 质量分数的增加，InP 去除速率逐渐增加，但表面粗糙度先减小后增大。 With the increase of the SiC abrasive mass fraction, the removal rate of InP increases gradually, but the surface roughness firstly decreases and then increases.
44038 当使用质量分数 4%、粒径 3 μm 的 SiC 磨料对 InP 晶片进行抛光时，InP 去除速率达到 2. 38 μm /h，表面粗糙度从原始的 33 nm 降低到 0. 84 nm。 The removal rate of InP is 2.38 μm/h, and the surface roughness can be reduced from 33 nm to 0.84 nmwhen InP wafer was polished with the SiC abrasive with a mass fraction of 4% and a particle size of 3 μm.
44039 基于结型场效应晶体管 ( JFET) 和双极型晶体管 ( BJT) 兼容工艺，设计了一种低失调高压大电流集成运算放大器。 A high voltage and high current operational power amplifier (HV-HC-OPA) with lowoffset voltage and current was proposed and verified based on junction field-effect-transistor (JFET) andbipolar junction transistor (BJT) compatible process.
44040 电路输入级采用 p 沟道 JFET ( p-JFET) 差分对共源共栅结构; The input stage of the HV-HC-OPA is implementedby a p-JFET differential pair cascode structure.
44041 中间级以 BJT 作为放大管，采用复合有源负载结构; The middle stage uses BJTs as amplifiers and a compoundactive load structure is adopted.
44042 输出级采用复合 npn 达林顿管阵列，与常规推挽输出结构相比，在输出相同电流的情况下，节省了大量芯片面积。 The output stage is composed of compound npn Darlington structurewhich can save a lot of chip area under the same output current compared to the traditional push-pullstage.
44043 基于 Cadence Spectre 软件对该运算放大器电路进行了仿真分析和优化设计，在±35 V 电源供电下，最小负载电阻为 6 Ω 时的电压增益为 95 dB，输入失调电压为 0. 224 5 mV，输入偏置电流为 31. 34 pA，输入失调电流为3.3 pA，单位增益带宽为 9. 6 MHz， The circuit was simulated and optimized based on Cadence Spectre simulator.Simulation resultsshow that 95 dB voltage gain on 6 Ω load, 0.224 5 mV input offset voltage, 31.34 pA input bias current, 3.3 pA input offset current and 9.6 MHz unity gain-bandwidth under ± 35 V double supplyvoltages.
44044 具有输出 9 A 峰值大电流能力。 The maximum output peak current can reach 9 A.
44045 设计了一种应用于 GaN 功率放大器栅极调制的随温度可调负压偏置电路。 A negative voltage bias circuit adjustable with the temperature was designed for the gatemodulation of GaN power amplifiers.