ID 原文 译文
44026 光刻胶上图形的周期性与胶体球的直径有关，并且大直径的胶体球的聚光性能要强于小直径胶体球，在曝光过程中随着曝光时间的增加，由于曝光量的增加以及光刻胶的漂白现象，光刻胶上微孔的尺寸也在增加。 The periodicity of thepattern on the photoresist was related to the diameter of the colloidal sphere, and the focusing property ofthe large-diameter colloidal sphere was stronger than that of the small-diameter colloidal sphere.In theprocess of exposure, the size of the micropore on the photoresist was increased with the increase of the exposure time due to the increase of the exposure and bleaching of the photoresist.
44027 最后以曝光后的光刻胶为掩膜，将感应耦合等离子体刻蚀技术 ( ICP) 以及湿法腐蚀相结合，制备出了图形化蓝宝石 ( PSS) 衬底。 Finally, the patternedsapphire substrate (PSS) was prepared by using the exposed photoresist as a mask, coupled with inductively coupled plasma etching (ICP) and wet etching.
44028 采用一步水热法制备镉掺杂的 Cu2O 薄膜 ( Cd /Cu2O) ，分别探讨了制备过程中 CuSO4浓度、NaOH 浓度、反应时间、反应温度和 CdSO4 浓度对 Cu2O 和 Cd /Cu2O 薄膜光电性能的影响。 Cu2O thin films were prepared by the one-step hydrothermal method.The effects of reaction conditions, such as the concentration of CuSO4 (cCuSO4) , concentration of NaOH (cNaOH) , reactiontime, reaction temperature and concentration of CdSO4 on the photoelectric properties of the Cu2O andCd /Cu2O thin films were discussed.
44029 结果表明，当反应釜中 CuSO4 浓度为 0. 114 2 mol /L、NaOH 浓度为 0. 028 6 mol /L、反应时间为 8 h、反应温度为 90 ℃、CdSO4 浓度分别为 0 mol /L 和 0. 571 4 μmol /L 时，可在基底 Cu 片上分别获得光电压为 0. 366 7 V 的 Cu2O 样品和光电压为 0. 460 2 V 的 Cd /Cu2O 薄膜样品。 The results show that when the copper sheet is inserted into the reactor and placed in the oven at 90 ℃ for 8 h, cCuSO4 in the reactor is 0.114 2 mol /L, cNaOH is 0.028 6 mol /L, the concentration of CdSO4 is 0 mol /L or 0.571 4 μmol /L, the Cu2O thin films with the highest photovoltage of 0.366 7 V and the Cd /Cu2O thin films with the highest photovoltage of 0.460 2 V are obtained respectively.
44030 紫外可见吸收 光 谱 ( UV-Vis) 、X 射 线 衍 射 ( XＲD) 图 谱、扫描电子显微镜 ( SEM) 和 能 谱 仪( EDS) 表征结果显示，Cu2O 的禁带宽度为 2. 1 eV，而 Cd /Cu2O 的禁带宽度最小达到 1. 8 eV; The characterization results of the Ultraviolet-visible spectroscopy (UV-Vis) , X-raydiffraction (XＲD) spectrum, energy dispersive spectrometer (EDS) and scanning electron microscope(SEM) indicate that the bandgap of Cu2O is 2.1 eV , while that of Cd /Cu2O is at least 1.8 eV .
44031 Cd /Cu2O 的择优生长面为 ( 111) 面，其衍射峰强度比 Cu2O 明显增强; Thepreferred growth surface of Cd /Cu2O is (111) plane, and its diffraction peak intensity is obviously stronger than that of Cu2O.
44032 Cd /Cu2O 样品表面与Cu2O 对比变得光滑，粒径由 Cu2O 的 1. 0～3. 0 μm 减小到 Cd /Cu2O 的 0. 3～0. 9 μm。 The surface of Cd /Cu2O sample is smoother than that of Cu2O, and the particlesize is reduced from 1.0－3.0 μm for Cu2O to 0.3－0.9 μm for Cd /Cu2O.
44033 对 InP 晶片进行了集群磁流变抛光实验， An experiment of the cluster magnetorheological polishing was implemented for InP wafer.
44034 研究了抛光过程中磨料参数 ( 类型、质量分数和粒径) 对 InP 材料去除速率和表面粗糙度的影响。 Effects of abrasive characteristics (such as the type, mass fraction and particle size) on the materialremoval rate and surface roughness of InP wafer were investigated.
44035 实验结果表明，InP 晶片的去除速率随磨料硬度的增加而变大，表面粗糙度受磨料硬度和密度的综合影响; Experimental results indicate that theremoval rate of InP increases with the increase of the abrasive hardness, and the surface roughness isaffected by the hardness and density of the abrasive.