| ID | 原文 | 译文 |
| 44016 | 提高了 IGBT 功率回路的可靠性与安全性。 | The reliability and safety of the IGBT power circuit were improved. |
| 44017 | 将固定延时电路集成在 IGBT 驱动芯片中，提高了系统的集成度。 | The integration of the system was increased withadding the fixed delay time circuit into the IGBT drive chip. |
| 44018 | 采用 UMC 0. 6 μm 高压 BCD 工艺模型对去饱和过流检测电路进行前仿和后仿。 | The UMC 0.6 μm HV BCD process modelwas used for the pre-and post-simulation of the DESAT overcurrent detection circuit. |
| 44019 | 仿真结果表明，采用线性温度补偿方法，基准电路的过流阈值电压典型值为 6. 97 V，温度系数为 19. 5×10－6 /℃。 | The simulation results show that the typical overcurrent threshold voltage of reference circuit is 6.97 V and the temperaturecoefficient is 19.5×10－6 /℃ with linear temperature compensation. |
| 44020 | IGBT 开启后消隐时间为 920 ns。 | After the IGBT is turned on, the blan-king time is 920 ns. |
| 44021 | 在不同工艺角仿真中，后仿固定延迟时间在 2. 8～4 ms 之间变化，典型值为 3. 3 ms，使功率回路储能元件中的冗余能量充分释放。 | The post-imitation fixed delay time changes from 2.8 ms to 4 ms in different cornersand the typical value is 3.3 ms. The redundant energy in power circuit storage elements is fully released. |
| 44022 | 对胶体球光刻中单层胶体晶体 ( MCC) 的曝光特性进行了研究。 | The exposure characteristics of monolayer colloidal crystals (MCCs) in colloidal spherephotolithography were studied. |
| 44023 | 利用磁控溅射的方法在蓝宝石衬底上生长 SiO2 薄膜并旋涂光刻胶， | SiO2 thin films were grown on sapphire substrates by magnetron sputteringand spin-coating with the photoresist. |
| 44024 | 通过固液界面自组装的方法在光刻胶上制备了单层胶体晶体。 | Monolayer colloidal crystals were fabricated on the photoresist bysolid-liquid interface self-assembly. |
| 44025 | 胶体球光刻利用单层胶体晶体作为微透镜阵列，通过紫外曝光的方法在光刻胶上制备微孔阵列。 | Colloidal sphere lithography used monolayer colloidal crystals asmicro lens arrays to fabricate micropore arrays on the photoresist by UV exposure. |