ID 原文 译文
44006 针对大马士革工艺中的等离子体损伤问题，提出了天线扩散效应，确定了相应工艺的天线扩散系数，提高了工艺可靠性评估的准确性。 Based onthe analysis of the plasma induced damage in Damascene process, the antenna expansion effect was proposed and the expansion coefficient was determined, the accuracy of the process reliability evaluation wasimproved.
44007 根据不同介质层沉积对器件的影响，确定了等离子体增强化学气相沉积 ( PECVD) 是大马士革工艺中易造成等离子体损伤的薄弱环节之一。 According to the influence of different dielectric layer deposition on the device, it determinedthat plasma enhance chemical vapor deposition (PECVD) was one of the weakness for the plasmainduced damage in Damascene process.
44008 实验结果表明，同种工艺满足相同的天线扩散效应，此时工艺参数的改变不会影响天线扩散系数。 The experimental result shows that one process has the same antenna expansion effect, and changes of process parameters do not affect the expansion coefficient.
44009 对带有不同天线结构的 PMOS 器件进行可靠性分析， The reliability characteristics of the PMOS device with different antenna structures were compared.
44010 得知与密齿状天线相比，疏齿状天线对器件的损伤更严重，确定了结构面积和间距是影响 PECVD 工艺可靠性水平的关键参数。 The compared results show that sparse comb antenna makes more serious damage on the device than dense combantenna with the same antenna area.It means that the antenna area and spacing are the key parametersaffecting the reliability of PECVD process.
44011 提出了一款带有固定延迟时间的绝缘栅双极型晶体管 ( IGBT) 去饱和 ( DESAT) 过流检测电路。 An insulated gate bipolar transistor (IGBT) desaturation (DESAT) overcurrent detectioncircuit with fixed delay time was proposed.
44012 在 IGBT 去饱和过流检测电路中加入固定延时电路， A fixed delay time circuit was added into the IGBT DESATovercurrent detection circuit.
44013 当检测到过流信号后关断IGBT，防止 IGBT 被烧毁。 When the overcurrent signal was detected, it was turned off immediately toprevent it from being burned out.
44014 同时固定延时电路开始计时， At the same time, the fixed delay time circuit started timing.
44015 经历了固定延迟时间后，电路错误信号清除，IGBT 恢复正常工作状态， After fixeddelay time, the error signal was cleared and the IGBT returned to normal operation status.