ID 原文 译文
43996 研究了采用垂直堆垛方式构筑的 MoS2 /C60范德华异质结的特性。 Characteristics of van der Waals heterojunction of MoS2 /C60 fabricated by vertical stacking were investigated.
43997 利用直流磁控溅射法制备 Mo 薄膜，对 Mo 薄膜进行硫化退火处理得到 MoS2 薄膜， Mo films were prepared by DC magnetron sputtering method, and MoS2 films wereformed by sulfurized and annealed in S(g) atmosphere.
43998 采用真空蒸镀法在 MoS2 薄膜上沉积 C60进而形成 MoS2 /C60范德华异质结，并制备了 Au /MoS2 /C60 /Al 结构的器件。 The C60 films were deposited on MoS2 films byvacuum evaporation, thus MoS2 /C60 van der Waals heterojunction was formed.A device with Au /MoS2 /C60 /Al structure was prepared.
43999 对 MoS2 薄膜的晶体结构进行了分析，对 MoS2，C60及 MoS2 /C60薄膜的喇曼光谱及光吸收特性进行了测试和表征。 The crystal structure of MoS2 film was analyzed.The Ｒaman spectra andabsorption properties of MoS2, C60 and MoS2 /C60 films were tested and characterized.
44000 结果表明:经过 750 ℃退火后的 MoS2 晶型为 2H 型;由于在 MoS2 和 C60薄膜之间范德华力的存在，相对于生长在 Si /SiO2 衬底上， The results showthat the crystal structure of MoS2 after annealing at 750 ℃ is trigonal prismatic (2H) .The Ｒaman spectra andabsorption properties of MoS2, C60 and MoS2 /C60 films were tested and characterized.
44001 沉积在 MoS2 上的 C60薄膜喇曼特征峰发生红移; When C60 isdeposited on the MoS2 film, the Ｒaman peak of C60 is slightly red-shifted in comparison with that deposited on Si /SiO2 substrate, due to van der Waals forces between MoS2 and C60 .
44002 MoS2 /C60薄膜在可见光范围内具有明显的光吸收特性; The MoS2 /C60 film hasgood absorption properties in visible light range.
44003 异质结表现出良好的整流特性， The heterojunction shows good rectification characteristics.
44004 通过电子导电模型分析得出电子的传输机制包含热电子发射，空间电荷限制电流传导 ( SCLC) 和隧穿现象。 Through electron conduction model analysis, the transport mechanisms of the electronics includethermionic emission, space charge limited conduction (SCLC) , and tunneling phenomenon.
44005 等离子体技术的广泛应用给工艺可靠性带来了挑战，等离子体损伤的评估成为工艺可靠性评估的重要内容之一。 The wide application of plasma technology makes a challenge to process reliability, theevaluation of the plasma damage becomes an important part of the process reliability evaluation.