ID 原文 译文
43986 这两种相似的失效模式使得对它们的失效机理的判断十分困难，尤其是短 EOS 脉冲作用时间只有几毫秒，造成的损坏与 ESD 损坏很相似。 The similarity between EOS and ESD makes it very difficult to judge theirfailure mechanisms, especially for short EOS pulse duration of only a few milliseconds, resulting indamage similar to that of ESD.
43987 因此，借助扫描电子显微镜 ( SEM) 和聚焦离子束 ( FIB) 等成像仪器以及芯片去层处理技术分析这两种失效机理的差别非常重要。 Therefore, it is very important to analyze the differences between the twofailure mechanisms by means of advanced imaging equipment such as SEM and FIB, and advanced diedelayering technology.
43988 通过实例分析这两种失效的机理及微观差别，从理论角度解释 ESD 和 EOS 的失效机理， The two failure mechanisms and the micro-differences between the two failuremechanisms were revealed through the analysis of practical examples.
43989 分析这两种失效在发生背景、失效位置、损坏深度和失效路径方面的差异，同时对这两种失效进行模拟验证。 The failure mechanisms of ESD andEOS were explained theoretically, and the differences between the two failure mechanisms in the occurrence background, failure location, damage depth and failure path were analyzed, and then the twofailures were simulated and verified.
43990 这种通过失效微观形态进行研究的方法，可以实现失效机理的甄别，对于提高 ESD 防护等级和 EOS 防护能力有着重要的参考作用。 This method of failure micro-morphology study can realize the identification of failure mechanism and has an important reference for the improvement of the ESD protectiongrade and EOS protection capability.
43991 半导体材料 Ga2O3 是继宽禁带半导体材料 SiC /GaN 之后新兴的直接带隙超宽禁带氧化物半导体，其禁带宽度为 4. 5 ～ 4. 9 eV，击穿电场强度高达 8 MV /cm ( 是 SiC 及 GaN 的 2 倍以上) ，物理化学稳定性高， Semiconductor material Ga2O3 is the emerging ultra-wide bandgap oxide semiconductormaterial with direct bandgap after the wide bandgap materials SiC /GaN, the bandgap width is 4.5 －4.9 eV, the breakdown field strength is up to 8 MV /cm (more than 2 times those of SiC and GaN) , thephysicochemical stability is high,
43992 在发展下一代电力电子学和固态微波功率电子学领域具有较大的潜力。 it has a great potential in the development of the next generation ofpower electronics and solid state microwave power electronics.
43993 自 2012 年第一只 Ga2O3 场效应晶体管诞生以来，Ga2O3 微电子学的研究呈现快速发展态势。 Since the first Ga2O3 field effect transistorwas invented in 2012, the scientific research of Ga2O3 microelectronics has shown a rapid developmenttrend.
43994 本文综述了 β-Ga2O3 单晶材料和外延生长技术以及 β-Ga2O3 二极管和 β-Ga2O3 场效应管等方面的研究进展， The research progress of β-Ga2O3 single crystal material, the epitaxial growth technology, β-Ga2O3diode and β-Ga2O3 field-effect transistor is reviewed.
43995 介绍了 β-Ga2O3 材料和器件的新工艺、新器件结构以及性能测试结果，分析了相关技术难点和创新思路，展望了 Ga2O3 微电子学未来的发展趋势。 New processes, new device structures and performance test results of β-Ga2O3 are introduced, and the technical difficulties and innovative ideas are analyzed.The future development trend of Ga2O3 microelectronics is prospected.