ID 原文 译文
43976 在设计中首先采用负载牵引法进行了器件参数提取，并以此为基础设计了阻抗变换网络进行阻抗变换和功率合成。 The device parameters were extracted by loadpull method, and an impedance transformation network was designed for impedance transformation andpower synthesis.
43977 研制出了工作频率为 4．4 ～ 5. 0 GHz、工作电压 32 V、连续波输出功率大于 160 W、功率附加效率大于 50%、功率增益大于 12 dB 的 GaNHEMT 内匹配功率管，具有广阔的工程应用前景。 An internally-matched GaN HEMT power device was developed which working frequencyis 4.4－5.0 GHz, operating voltage is 32 V, continuous wave output power is greater than 160 W, poweradded efficiency is more than 50% and the power gain is more than 12 dB.The GaN power device has abroad prospect in engineering applications.
43978 航天器及其内部元器件在太空中会受到单粒子效应 ( SEE) 带来的威胁，因此航天用电子器件在装备前必须进行抗 SEE 能力的测试评估。 Spacecrafts and their internal components will be threatened by single event effect(SEE) in space.Therefore aerospace electronic devices must be tested and evaluated for their ability resisting SEE before equipped.
43979 针对传统测试方法存在的测试系统程序容易在辐照过程崩溃、统计翻转数不准确、单粒子闩锁 ( SEL) 辨别不清晰和忽略内核翻转统计等问题， The test system programs for traditional test methods are easy to collapse inthe irradiation process, inaccurate statistical flip counts, single event latchup (SEL) in discrepancies, and neglect of kernel flip statistics.
43980 设计了一种测试系统，通过片外加载与运行程序从而减少因辐照导致片内程序异常的现象; A test system was designed to reduce the phenomenon of on-chip program exceptions caused by irradiation by loading and running programs off-chip.
43981 通过片外主控电路统计被测电路翻转数使统计翻转结果准确; Flips of the circuit undertest are counted by an off-chip main control circuit to make the statistical result accurate.
43982 通过主控电路控制被测电路时钟供给排除因频率增加导致电流过大而误判发生 SEL 的情况; Controlling theclock signal of the circuit under test by the main control circuit to eliminate the misjudgment of SEL dueto excessive current caused by the increase of frequency.
43983 通过内核指令集统计内核翻转数。 Counting kernel flips through a kernelinstruction set.
43984 实验结果表明，该测试系统可以实时全面地监测数字信号处理器 ( DSP) 的 SEE，并有效防止辐照实验器件 ( DUT) 因 SEL 而失效。 The results show that the test system provides comprehensive real-time monitoring of thesingle-particle effects of digital signal processors (DSP) and prevents the device under test (DUT) from fail due to SEL effectively.
43985 静电放电 ( ESD) 和过电应力 ( EOS) 是引起芯片现场失效的最主要原因， Electrostatic discharge (ESD) and electrical overstress (EOS) are major causes for fieldfailures in integrated circuits.