ID 原文 译文
43966 该方法能有效减少由大量冗余 TSV 造成的面积开销，降低缺陷 TSV 修复率对冗余 TSV 数量的依赖性，提高缺陷 TSV 的修复率和 3D-IC 的可靠性。 The proposed method can effectively cut down the area overhead caused by a large number of redundant TSVs and reduce the dependence ofdefective TSVs repair rate on the number of redundant TSVs, and improve the defective TSVs repair rateand the reliability of 3D-ICs.
43967 基于 SiGe BiCMOS 工艺，设计实现了一款用于有源相控阵雷达的 X 波段低噪声放大器 ( LNA) 。 An X-band SiGe low noise amplifier (LNA) for phased array radars was designed basedon SiGe BiCMOS process.
43968 采用 Cascode 结构，有效扩展了放大器带宽，提高了放大器增益。 Using Cascode structure, the bandwidth of the LNA was expanded and the gainwas improved.
43969 使用噪声匹配与功率匹配一体化设计方法，实现了噪声与功率的同时匹配。 The integrated design method of noise matching and power matching was used to achievenoise and power matching simultaneously.
43970 同时加入了温度补偿偏置电路，降低了 LNA 高低温增益变化。 The temperature compensation bias circuits were adopted to reduce gain variation with temperature of the LNA.
43971 采用 0. 18 μm SiGe BiCMOS 工艺进行设计仿真和流片，测试结果表明，该 LNA 最高增益为 17 dB，全频带内高低温增益变化 0. 5 dB，噪声系数为 1. 8 dB@ 10 GHz; The 0.18 μm SiGe BiCMOS process was used for designsimulation and tape out.The measurement results show that the maximum gain of LNA is 17 dB, the gainvariation with temperature is 0.5 dB within the whole bandwidth, the noise factor is 1.8 dB at 10 GHz.
43972 LNA使用 1. 8 V 供电，工作电流为 14 mA。 The LNA is supplied by 1.8 V, and the operating current is 14 mA.
43973 芯片核心面积为 0. 50 mm×0. 58 mm。 The core area of the chip is0.50 mm×0.58 mm.
43974 基于 GaN 功率器件工艺自主研发的大栅宽 GaN 高电子迁移率晶体管 ( HEMT) 管芯，采用内匹配技术和宽带功率合成技术相结合的方法，研制出了一款 C 波段 160 W 连续波 GaNHEMT 内匹配功率器件。 Based on a self-developed large gate-width GaN high electron mobility transistor(HEMT) chip, a C-band 160 W continuous wave internally-matched GaN HEMT power device was developed using a combination of internal matching and broadband power combined technology.
43975 通过优化管芯的结构，设计出了满足连续波使用要求的大功率 GaN 管芯，然后进行了内匹配器件的设计， By optimizing the chip structure, a high-power GaN chip was designed to meet the requirements of continuouswave, then the internally-matched device was designed.