ID 原文 译文
43936 使用 TCAD 软件对 STI 结构应力分布进行了仿真分析，通过分组实验对静态随机存储器 ( SＲAM) 芯片静态漏电流进行了测试分析。 Stress distribution of the STI structure was simulated using TCAD software.The static leakage current of the staticrandom access memory (SＲAM) was tested and analyzed by experimental splits.
43937 结果表明，牺牲氧化层工艺引起的热应力是导致 SＲAM 漏电流的主要因素， The results show that thethermal stresses caused by SAC OX process is the main cause of high leakage current of the SＲAM.
43938 其工艺温度越高，STI 应力减小，芯片的漏电流则越小; The stress decreased as the oxidation temperature increasing, which results in the reduction of the leakagecurrent.
43939 而取消牺牲氧化层工艺可以获得更小的应力和漏电流。 Less stresses and leakage current can be obtained by eliminating SAC OX process.
43940 栅氧化层退火工艺可以有效释放应力并修复应力产生的缺陷， Gate oxide annealing process can release the accumulated stresses and repair the defects induced by stresses effectively.
43941 退火温度越高漏电流越小，片内一致性也越好。 The higher the annealing temperature, the smaller the leakage current and the better the on-chip consistency.
43942 因此，对热工艺过程进行优化，避免热应力积累，是 CMOS 集成电路工艺开发过程中要考虑的关键问题之一。 So optimizing thermal process conditions to avoid the accumulation of stress is one of the keyfactors to be considered during the CMOS IC process development.
43943 噪声检测是小型化微波集成电路可靠性诊断的一种无损检测手段， The noise measurement is a nondestructive detection method for reliability diagnosis ofminiaturized microwave integrated circuits.
43944 针对 GaAs PHEMT单片微波集成电路 ( MMIC) 功率放大器的可靠性问题，进行了噪声测试实验， Aiming at the reliability problems of GaAs PHEMT monolithicmicrowave integrated circuit (MMIC) power amplifier, the noise test experiments were carried out.
43945 研究了其低频噪声的测试方法。 The measurement method of the low frequency noise was studied.