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43926 结果表明，寄生电阻对测试应力影响很小，而缓冲电容换流回路寄生电感对 IGBT 关断能量影响显著，金属氧化物可变电阻器 ( MOV) 放电回路寄生电感对 IGBT 的过电压影响显著，且各支路寄生电感对 IGBT 过电压的影响存在耦合性。 The results show that the parasitic resistance has littleeffect on the test stress, and the parasitic inductance of the snubber capacitor commutation loop significantly affects the IGBT turn-off energy, the parasitic inductance of the metal oxide varistor (MOV) discharge loop significantly affects the IGBT overvoltage, and the influence of the parasitic inductance ofeach branch on the IGBT overvoltage is coupled.
43927 建立的平台模型和寄生参数分析可以有效指导断路器用功率器件测试平台设计。 The platform model and parasitic parameter impactanalysis can effectively guide the design of power device test platform for circuit breakers.
43928 采用 0. 18 μm SiGe BiCMOS 工艺，设计并实现了一款传输速率为 25 Gbit /s 的高速光接收机前端电路。 A high-speed optical receiver front-end circuit with a transmission rate of 25 Gbit /s wasdesigned and implemented by using 0.18 μm SiGe BiCMOS process.
43929 前端电路主要包括跨阻放大器 ( TIA) 、限幅放大器 ( LA) 、直流偏移消除电路和输出缓冲级 4 部分。 The front-end circuit mainly included four parts, such as the transimpedance amplifier (TIA) , limiting amplifier (LA) , DC offset cancellation circuit and output buffer stage.
43930 跨阻放大器采用了伪差分结构，相比于传统的单端转差分电路，减少了共模噪声，增强了电路的稳定性。 The pseudo-differential structure was adopted in transimpedanceamplifier.Compared with the traditional single-ended to differential circuits, common-mode noise was reduced and circuit stability was enhanced.
43931 限幅放大器采用了 Cherry-Hooper 结构，利用射极跟随器作为反馈通路，降低了输出电阻，将输出电容与放大级隔离，从而拓展带宽，提高电路增益。 The limiting amplifier employed the Cherry-Hooper structure, which used the emitter follower as a feedback path to reduce the output resistance and isolate the outputcapacitor from the amplifier stage, thereby expanding the bandwidth and increasing the gain of the circuit.
43932 直流偏移消除电路，有效消除了跨阻放大器输出端的直流偏移，提高了电路的稳定性。 The DC offset cancellation circuit effectively eliminated the DC offset at the output of TIA, and increasedthe stability of the circuit.
43933 仿真结果表明，光接收机前端电路跨阻增益为 65. 4 dBΩ，带宽为 25. 3 GHz，灵敏度为－16. 7 dBm，功耗为 163 mW。 The simulation results show that the transimpedance gain of the optical receiverfront-end circuit is 65.4 dBΩ, the bandwidth is 25.3 GHz, the sensitivity is －16.7 dBm and the powerconsumption is 163 mW.
43934 浅槽隔离 ( STI) 技术广泛应用于深亚微米 CMOS 集成电路制造，是工艺应力主要的来源之一。 Shallow trench isolation (STI) process is widely used in deep sub-micron CMOS ICprocess technology, and it＇s one of the main stress sources.
43935 CMOS 工艺采用牺牲氧化层 ( SAC OX) 、栅氧化层以及退火等多道热工艺过程，由此产生的热应力对集成电路漏电流有重要影响。 In CMOS process, there are many thermalprocesses, such as sacrificial oxide (SAC OX) , gate dielectric formation and annealing, etc. Thermalstresses that induced by these processes have obvious impact on the leakage current of ICs.