ID 原文 译文
43916 研究了瞬时液相 ( TLP) 扩散连接过程中镍－锡－铜烧结接头的显微结构演变与其抗剪强度的关系。 The correlation between microstructures evolution and mechanical strengths of Ni-Sn-Cusolder joints formed during the transient liquid phase (TLP) diffusion bonding process was investigated.
43917 结果表明，由厚度为 20 μm 的纳米镍焊膏中插入厚度为 60 μm 的纯锡箔所组成的烧结接头，在 0. 6 MPa 压力及 340 ℃的烧结温度下烧结 2 h，接头与基板界面逐渐形成含铜量较高的扇贝状金属间化合物( IMC) ( Cu，Ni) 6 Sn5 ; Solder joints were made by inserting one sheet of pure Sn foil with 60 μm thickness into a 20 μm thicknano-Ni paste.The results show that after sintering at 340 ℃ for 2 h under 0.6 MPa pressure, the scallopCu-rich (Cu, Ni) 6 Sn5 intermetallic compounds (IMCs) occurs at the interface of the solder joint and thesubstrate.
43918 在 350 ℃ 下烧结 2. 5 h，接头中部形成含镍量较高、含铜量较低的 ( Ni，Cu) 3 Sn4 IMC; After sintering at 350 ℃ for 2.5 h, the Ni-rich and low-Cu (Ni, Cu) 3 Sn4 IMCs occurs inthe central of the solder joints.
43919 在 350 ℃ 下烧结 3 h 后接头中部由均匀、致密的( Ni，Cu) 3 Sn4 IMC 组成。 With the increase of the sintering time to 3 h at 350 ℃, the center of thesolder joints is entirely composed of uniform and dense (Ni, Cu) 3 Sn4 IMCs.
43920 整个烧结过程中接头处的空隙比先增大后减小，其抗剪强度在 350 ℃下烧结 3 h 后达到最高 15. 4 MPa。 During the bonding process, the void fraction in the solder joints first increases and then decreases, and it exhibits the highest shearstrength of 15.4 MPa after sintering at 350 ℃ for 3 h.
43921 在 250 ℃时效 24 ～ 96 h 后，接头抗剪强度随着时效时间的增加不断降低，72 h 后抗剪强度为 10 MPa 并趋于稳定。 In addition, the shear strength of solder joints isexamined after aging at 250 ℃ for 24－96 h, and it decreases consequently when increasing the aging time.After aging for 72 h it performs a shear strength of 10 MPa which remains stable.
43922 接头在高温时效后保持了一定的抗剪强度。 It indicates that the solderjoints remain a high shear strength even after aging at a high temperature.
43923 为准确得到绝缘栅双极型晶体管 ( IGBT) 在混合型直流断路器下的性能参数，测试平台的设计非常重要。 In order to accurately obtain the performance parameters of the insulated gate bipolartransistor (IGBT) under the hybrid DC circuit breaker, the design of the test platform is very important.
43924 结合断路器的特殊工况，对测试平台关键部件模型进行分析，并考虑寄生参数建立测试平台精细化电路模型。 Combined with the special working conditions of the circuit breaker, the key component model of the testplatform was analyzed, and the parasitic parameters were considered to establish a refined circuit modelfor the test platform.
43925 仿真分析了测试平台寄生参数对被测 IGBT 测试电气应力的影响。 The influence of the parasitic parameters of the test platform on the electrical stressof the tested IGBT was simulated and analyzed.