ID 原文 译文
43906 在 GaAs 单片微波集成电路 ( MMIC) 设计中，开关场效应晶体管 ( FET) 是研制开关、数控衰减器、数控移相器等电路的基础。 In the design of the GaAs monolithic microwave integrated circuit (MMIC) , the switchfield-effect transistor (FET) is the basis for some integrated circuits, such as switches, digital attenuatorsand digital phase shifters.
43907 基于 0. 15 μm 栅长 GaAs 开关 FET，研究了 GaAs开关 FET 在低频下的功率压缩特性。 Based on the GaAs switch FET with the gate length of 0.15 μm, the powercompression characteristics of GaAs switch FET in the low frequency was studied.
43908 通过对开关 FET 的小信号等效电路和大信号模型的分析，发现频率下降会降低开关 FET 的栅压，从而降低开关 FET 低频下的功率容量。 By analyzing the smallsignal equivalent circuit and the large signal model of the switch FET, it was found that the gate voltage ofthe FET switch was reduced when the frequency decreased, thus the power capacity of the switch FET inthe low frequency was reduced.
43909 通过增加栅极电阻来提高栅极电压，进而增加开关 FET 功率容量。 The gate resistance was increased to raise the gate voltage and further toimprove the power capacity of the switch FET.
43910 最后通过实际的开关电路验证了增大栅极电阻可有效提高开关电路的功率容量，对今后的开关类器件设计工作起到一定的指导意义。 Finally, the actual switching circuit proves that increasingthe gate resistance can effectively improve the power capacity of the switching circuit.It has some guidingsignificances for the design of switching devices.
43911 通过溶胶－凝胶 ( sol-gel) 法分别在石英及 Si 衬底上制备了含不同 Mg 原子数分数的氧化镁锌 ( MZO) 纳米薄膜， Magnesium zinc oxide (MZO) nano thin-films with different Mg atom fractions were prepared on quartz and Si substrates by sol-gel method.
43912 并利用 X 射线衍射仪 ( XＲD) 、扫描电子显微镜 ( SEM) 、高阻测量仪研究了 Mg 掺杂对 MZO 纳米薄膜的表面形貌、结构及电学性能等方面的影响。 The effects of Mg doping on the surface morphology, structure and electrical properties of MZO nano thin-films were investigated by X-ray diffraction (XＲD) , scanning electron microscopy (SEM) and high-resistance measuring instruments.
43913 结果表明，随着 Mg 原子数分数的增加，MZO 薄膜的晶粒数目增加，且排列致密和均匀，表现为 ZnO 的六方纤锌矿结构; The results show thatwith the increase of the Mg atom fraction, the crystal grain number of the MZO thin-film increases, accompanying with the more dense and uniform arrangement, which exhibits a hexagonal wurtzite structureof ZnO.
43914 当 Mg 原子数分数增加到一定程度时，薄膜 XＲD 的半高宽 ( FWHM) 增大，结晶质量降低，MZO 薄膜中 ZnO 的含量减少，晶粒尺寸变小，其电阻率明显增加且方块电阻稳定性较好; With the increase of Mg atom fraction, the half-height width (FWHM) increases, the crystalquality drops down, the content of ZnO in the MZO film decreases, and the grain size of the MZO film reduces.The resistivity of MZO film increases obviously and the stability of the square resistance is better.
43915 通过紫外－可见光分光度计 ( UV-VIS) 透射率曲线测试，发现 MZO 薄膜在紫外光区有明显的吸收特性，随着 Mg 含量的增加透射率曲线发生蓝移。 The transmission curve of ultraviolet-visible spectrophotometer (UV-VIS) shows that the MZO film has anobvious absorption characteristics in the ultraviolet region.And the transmittance curve is blue-shiftedwith the increase of Mg content.