ID 原文 译文
43896 其作用是当芯片端口电压高于电源电压或低于地 ( GND) 电平时为芯片提供保护信号，阻止电流倒灌入芯片。 As the portvoltage of the chip is higher than power supply voltage or lower than GND voltage, the circuit can providea protective signal for the chip to prevent the current flow backward into the chip.
43897 在 3. 3 V电源电压下，该电路具有迟滞功能，防止其受到噪声干扰反复打开和关闭芯片。 At a power supplyvoltage of 3.3 V, the circuit has a hysteresis function to prevent it from turning on and off repeatedlycaused by the noise interference.
43898 仿真结果表明，端口电压高于 3. 55 V 时电路提供保护信号，重新下降至 3. 35 V 后系统恢复工作; The simulation results show that the circuit provides a protection signalfor the chip when the port voltage is higher than 3.55 V and restarts to work when the port voltage islower than 3.
43899 同理，端口电压低于－0. 25 V 时电路提供保护信号，重新上升至－0. 05 V 后系统恢复工作。 35 V. Similarly, the circuit provides a protection signal for the chip when the port voltage islower than －0.25 V and restarts to work when the port voltage increases to －0.05 V.
43900 流片测试结果显示该电路可以为 CAN 总线芯片提供有迟滞的过压保护功能，与符合仿真结果基本一致。 The test results show that the circuit can provide the function of overvoltage protection and hysteresis for CAN bus chip, which is basically consistent with the simulation results.
43901 研制了一款可应用于新一代宽带无线移动通信系统的 26 GHz GaN 单片微波集成电路( MMIC) Doherty 功率放大器 ( DPA) 。 A 26 GHz GaN monolithic microwave integrated circuit (MMIC) Doherty poweramplifier (DPA) was designed and manufactured for the new generation broadband wireless mobile communication system application.
43902 Doherty 功率放大器的输入匹配网络中采用兰格耦合器进行载波功率放大器和峰值功率放大器功率合成及 90°相位补偿， In the input matching network of the Doherty power amplifier, the Langercoupler was used to synthesize the power of the carrier power amplifier, and peaking power amplifier and 90° phase compensation was carried out.
43903 输出网络中采用相位补偿线和阻抗变换电路，提高了放大器的线性度和效率。 The efficiency and linearity of the amplifier were improved byphase offset lines and impedance conversion circuit in the output network.
43904 采用 SiC 衬底 AlGaN/GaN 高电子迁移率晶体管( HEMT) 工艺进行了流片，芯片面积为 3. 0 mm × 2. 5 mm。 The amplifier was implementedin a AlGaN/GaN HEMT technology on SiC substrate with a chip area of 3.0 mm×2.5 mm.
43905 芯片装配后测试表明，在频率为24.5～26. 0 GHz 内，Doherty MMIC 功率放大器饱和输出功率为 4 W，饱和时漏极效率大于 24%，在回退 8 dB 时的漏极效率大于 15%。 The test results of the fabricated chip show that in the frequency range of 24.5 － 26.0 GHz the saturation outputpower of Doherty MMIC power amplifier is 4 W, the drain efficiency is more than 24% at the powersaturation output, and the drain efficiency is more than 15% at 8 dB of back-off output power.