ID 原文 译文
43866 对近年来射频/微波能量收集系统的整流电路的研究进展进行了概述。 The research progress of the rectifier for the ＲF /microwave energy harvestingsystem in recent years is reviewed.
43867 分析并讨论了整流电路的技术指标和电路结构， The technical specifications and circuit structure of the rectifier areanalyzed and discussed.
43868 分别从器件研究和电路设计两个方面对整流电路的研究进展进行分析、归纳。 The research progress of the rectifier is analyzed and summarized from twoaspects of device research and circuit design.
43869 从原理、性能提升等方面分析具有低的零偏压电阻值的自旋二极管应用于微瓦量级信号整流电路的潜力; The application potential of the spin diode with low zero biasresistance in microwatt level power rectifier is analyzed from the operating principle, performance enhancement and so on.Key issues of the rectifier design are analyzed from four aspects:
43870 从微弱信号整流、宽输入功率范围信号整流、高功率转换效率整流、阻抗去敏感化4 个方面分析了整流电路设计的关键问题，归纳出有效的解决途径并对整流电路的发展趋势进行了展望。 weak signal rectification, operating in wide input power range, high power conversion efficiency rectification andmitigating resistance sensitivity. Effective solutions are summarized and the development trend of rectifieris prospected.
43871 依据电参数指标要求，针对高压－高增益硅功率晶体管基区结构和终端结构进行优化研究。 According to the electrical parameter requirements, the optimization of the base structureand terminal structure of high-voltage and high-gain silicon power transistor was studied.
43872 提出了一种可用于改善集电极－发射极击穿电压 ( V( BＲ) CEO ) 和电流放大倍数 ( β) 矛盾关系的带埋层的新型基区结构， A new basestructure with buried layer which can improve the contradiction between the collector-emitter breakdownvoltage (V(BＲ) CEO) and the current amplification (β) was proposed.
43873 并针对埋层基区结构对高压－高增益硅功率晶体管电性能及可靠性的影响进行了研究。 In addition, the influences of theburied layer structure on the electrical performance and reliability of high-voltage and high-gain siliconpower transistors were studied.
43874 仿真结果表明:新型基区结构不仅可以很好地折中晶体管 β 与 V( BＲ) CEO之间的矛盾关系，而且还能在较大的埋层基区宽度、埋层基区掺杂峰值浓度范围内使晶体管获得较低且一致性较好的饱和压降; The simulation results show that the new base structure can compromisethe contradiction between β and V(BＲ) CEO, and achieve a low and consistent saturation voltage drop withina larger range of width and the peak doping concentration of the buried base region.
43875 具有新型基区结构的晶体管在改善正偏的情况下抗二次击穿能力具有明显优势。 The transistor withnew base structure has an obvious advantage in resisting the secondary breakdown under the condition ofimproving positive bias.