| ID | 原文 | 译文 |
| 43846 | 实验结果表明，当 ＲTA 温度小于 700 ℃ 时，PL 谱峰值波长只有微移，且变化与其他参数关系不大; | The experimental results show that the peakwavelength of the PL spectrum shifts slightly when the ＲTA temperature is less than 700 ℃, and thechange has little relationship with other parameters. |
| 43847 | 当 ＲTA 温度大于 700 ℃时，PL 谱峰值波长移动与介质层厚度和 ＲTA 时间都密切相关， | When the ＲTA temperature is greater than 700 ℃, the peak wavelength shift of the PL spectrum is closely related to the thickness of dielectric layer andＲTA time. |
| 43848 | 当 SiO2 厚度为 200 nm，退火温度为 750 ℃，时间为200 s 时，可获得 54. 3 nm 的最大波长蓝移。 | When the SiO2 thickness is 200 nm, and the wafer is annealing at 750 ℃ for 200 s, the maximum wavelength blue shift is 54.3 nm. |
| 43849 | 该种 QWI 方法能够诱导 InGaAsP MQW 带隙移动，QWI效果与 InGaAsP MQW 中原子互扩散激活能、互扩散原子密度以及在 ＲTA 过程中热应力有关。 | The QWI method can induce the band gap shift of InGaAsPMQW.The QWI effect is related to atomic interdiffusion activation energy, interdiffusion atom density andthermal stress in the ＲTA process. |
| 43850 | 研究并分析了半导体激光密集谱合束技术中体布拉格光栅 ( VBG) 的热效应问题。 | The thermal effect of the volume Bragg grating (VBG) in semiconductor laser densespectrum combining technology was studied and analyzed. |
| 43851 | 为了提高半导体激光器的输出功率及其电光转换效率，利用 COMSOL 软件模拟了半导体激光器中 VBG 在自由传导散热和水循环冷却两种条件下的温度分布， | In order to improve the output power andelectro-optic conversion efficiency of the semiconductor laser, the temperature distributions of VBG in thesemiconductor laser under free conduction cooling and water cycle cooling were simulated by COMSOL software. |
| 43852 | 通过对比这两种条件下 VBG 温度对其中心波长漂移量及输出功率的影响，分析了 VBG 热效应变化。 | The variation of VBG thermal effect was analyzed by comparing the effects of VBG temperatureon the central wavelength drift and output power under the two conditions. |
| 43853 | 模拟与实验结果表明，水循环冷却可以有效将 VBG 的温度从 390. 44 K 降低到 299. 09 K，减小了 VBG 的波长漂移量，有效抑制了 VBG 的热效应问题。 | The simulation and experimentresults show that the temperature of the VBG is reduced from 390.44 K to 299.09 K effectively underwater cycle cooling, the wavelength drift of VBG is reduced, and the VBG thermal effect is suppressedeffectively. |
| 43854 | 因此合理控制 VBG 的温度，可提高半导体激光器的输出功率和电光转换效率。 | Therefore reasonably controling the temperature of the VBG can improve the output power andthe electro-optic conversion efficiency of the semiconductor laser. |
| 43855 | 研究了层压封装的平面 LED 光源在高温高湿与水下环境的可靠性。 | The reliability of the plane LED light source with laminated package was studied in hightemperature, high humidity and underwater environment. |